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Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy 期刊论文
2015, 卷号: 9, 期号: [db:dc_citation_issue], 页码: 9868
作者:  Chen, Kun[1,2];  Wan, Xi[1,2];  Wen, Jinxiu[3,4];  Xie, Weiguang[5];  Kang, Zhiwen[1,2]
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/03
Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy 期刊论文
2015, 卷号: 27, 期号: [db:dc_citation_issue], 页码: 6431
作者:  Chen, Kun[1,2];  Wan, Xi[1,2];  Xie, Weiguang[3];  Wen, Jinxiu[4,5];  Kang, Zhiwen[1,2]
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/03
Lateral Built-In Potential of Monolayer MoS2-WS2In-Plane Heterostructures by a Shortcut Growth Strategy 期刊论文
2015, 卷号: 27, 期号: 41, 页码: 6431
作者:  Chen, Kun[1];  Wan, Xi[1];  Xie, Weiguang[2];  Wen, Jinxiu[3];  Kang, Zhiwen[1]
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/13
Electronic Properties of MoS2-WS2Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy 期刊论文
2015, 卷号: 9, 期号: 10, 页码: 9868
作者:  Chen, Kun[1];  Wan, Xi[1];  Wen, Jinxiu[2];  Xie, Weiguang[3];  Kang, Zhiwen[1]
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/23


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