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CORC

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High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018, 卷号: 13, 页码: 214-220
作者:  Li, Jun[1];  Huang, Chuan-Xin[2];  Zhao, Cheng-Yu[3];  Ding, Xingwei[4];  Zhang, Jian-Hua[5]
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24
Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2018, 卷号: 6, 页码: 9642-9648
作者:  Shen, Piaoyang[1];  Li, Xiaomin[2];  Cao, Fan[3];  Ding, Xingwei[4];  Yang, Xuyong[5]
收藏  |  浏览/下载：6/0  |  提交时间：2019/04/22
Enhanced photovoltaic performance of inverted polymer solar cells through atomic layer deposited Al2O3 passivation of ZnO-nanoparticle buffer layer 期刊论文
NANOTECHNOLOGY, 2018, 卷号: 29, 页码: 395204
作者:  Wei, Bin[1];  Tang, Zhenyu[2];  Wang, Shuanglong[3];  Qin, Cunping[4];  Li, Chunya[5]
收藏  |  浏览/下载：17/0  |  提交时间：2019/04/22
Improved the quality of the glass/glass laser bonding through the optimization of glass powder size in planetary ball mill 期刊论文
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2017, 卷号: 651, 页码: 273-281
作者:  Li, Yi[1];  Tian, Rui[2];  Xiao, Yanyi[3];  Wang, Wen[4];  Ding, Xingwei[5]
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24
Low-voltage-drive and high output current InGaZnO thin-film transistors with novel SiO2/HfO2/SiO2 structure 期刊论文
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2017, 卷号: 651, 页码: 228-234
作者:  Zhang, Hao[1];  Zhang, Yu[2];  Chen, Xiong[3];  Li, Chunya[4];  Ding, Xingwei[5]
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24
Enhancement of Electrical Stability in IGZO Thin-Film Transistors Inserted with an IZO Layer Grown by Atomic Layer Deposition 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2017, 卷号: 12, 页码: 273-277
作者:  Ding, Xingwei[1];  Li, Sheng[2];  Song, Jiantao[3];  Zhang, Jianhua[4];  Jiang, Xueyin[5]
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/24
Effect of O-2 plasma treatment on density-of-states in a-IGZO thin film transistors 期刊论文
ELECTRONIC MATERIALS LETTERS, 2017, 卷号: 13, 页码: 45-50
作者:  Ding, Xingwei[1];  Huang, Fei[2];  Li, Sheng[3];  Zhang, Jianhua[4];  Jiang, Xueyin[5]
收藏  |  浏览/下载：1/0  |  提交时间：2019/04/24
Performance enhancement in InZnO thin-film transistors with compounded ZrO2-Al2O3 nanolaminate as gate insulators 期刊论文
CERAMICS INTERNATIONAL, 2016, 卷号: 42, 页码: 8115-8119
作者:  Zhang, Jianhua[1];  Ding, Xingwei[2];  Li, Jun[3];  Zhang, Hao[4];  Jiang, Xueyin[5]
收藏  |  浏览/下载：8/0  |  提交时间：2019/04/26
Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 卷号: 29, 页码: 326-330
作者:  Ding, Xingwei[1];  Zhang, Jianhua[2];  Shi, Weimin[3];  Ding, He[4];  Zhang, Hao[5]
收藏  |  浏览/下载：16/0  |  提交时间：2019/04/26
IGZO thin film transistors with Al2O3 gate insulators fabricated at different temperatures 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 卷号: 29, 页码: 69-75
作者:  Ding, Xingwei[1];  Zhang, Hao[2];  Zhang, Jianhua[3];  Li, Jun[4];  Shi, Weimin[5]
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/26

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