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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：山东大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Direct growth of freestanding GaN on C-face SiC by HVPE 期刊论文 SCIENTIFIC REPORTS, 2015, 卷号: 5 作者:  Tian, Yuan;  Shao, Yongliang;  Wu, Yongzhong;  Hao, Xiaopeng;  Zhang, Lei 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 Improving the Quality of GaN Crystals by Using Graphene or Hexagonal Boron Nitride Nanosheets Substrate 期刊论文 ACS applied materials & interfaces, 2015, 卷号: 7, 期号: 8, 页码: 4504-4510 作者:  Zhang, Lei;  Li, Xianlei;  Shao, Yongliang;  Yu, Jiaoxian;  Wu, Yongzhoug 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/17 graphene  boron nitride nanosheets  GaN  hydride vapor phase epitaxy  light-emitting diodes   Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate 期刊论文 SCIENTIFIC REPORTS, 2014, 卷号: 4 作者:  Zhang, Lei;  Yu, Jiaoxian;  Hao, Xiaopeng;  Wu, Yongzhong;  Dai, Yuanbin 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/17 Large Area Stress Distribution in Crystalline Materials Calculated from Lattice Deformation Identified by Electron Backscatter Diffraction 期刊论文 SCIENTIFIC REPORTS, 2014, 卷号: 4 作者:  Shao, Yongliang;  Zhang, Lei;  Hao, Xiaopeng;  Wu, Yongzhong;  Dai, Yuanbin 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 A novel porous substrate for the growth of high quality GaN crystals by HVPE 期刊论文 RSC ADVANCES, 2014, 卷号: 4, 期号: 66, 页码: 35106-35111 作者:  Dai, Yuanbin;  Wu, Yongzhong;  Zhang, Lei;  Shao, Yongliang;  Tian, Yuan 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/17 EBSD crystallographic orientation research on strain distribution in hydride vapor phase epitaxy GaN grown on patterned substrate 期刊论文 CRYSTENGCOMM, 2013, 卷号: 15, 期号: 39, 页码: 7965-7969 作者:  Shao, Yongliang;  Dai, Yuanbin;  Hao, Xiaopeng;  Wu, Yongzhong;  Zhang, Lei 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/23 Simulation and Growth Study of V/III Ratio Effects on HVPE Grown GaN 期刊论文 INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2013, 卷号: 8, 期号: 3, 页码: 4110-4119 作者:  Li, Hongyun;  Zhang, Lei;  Shao, Yongliang;  Wu, Yongzhong;  Hao, Xiaopeng 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/23 V/III  Simulation  Hydride vapor phase epitaxy  GaN   Growth of high quality GaN on a novel designed bonding-thinned template by HVPE 期刊论文 CRYSTENGCOMM, 2012, 卷号: 14, 期号: 14, 页码: 4777-4780 作者:  Zhang, Haodong;  Shao, Yongliang;  Zhang, Lei;  Hao, Xiaopeng;  Wu, Yongzhong 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/23 Improvement of crystal quality HVPE grown GaN on an H_3PO_4 etched template 会议论文 第十六届全国晶体生长与材料学术会议 作者:  Lei Zhang;  Yongliang Shao;  Xiaopeng Hao;  Yongzhong Wu;  Haodong Zhang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/31 GaN  HVPE  Improvement of crystal quality HVPE grown GaN on an H_3PO_4 etched template  PO