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Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology 期刊论文
MICROELECTRONICS RELIABILITY, 2012, 卷号: 52, 期号: 1, 页码: 130-136
Ning, BX; Zhang, ZX; Liu, ZL; Hu, ZY; Chen, M; Bi, DW; Zou, SC
收藏  |  浏览/下载：14/0  |  提交时间：2013/04/17
Stationary phase approximation approach to the quasiparticle interference on the surface of a strong topological insulator 期刊论文
PHYSICAL REVIEW B, 2012, 卷号: 85, 期号: 12, 页码: 125314
Liu, Q; Qi, XL; Zhang, SC
收藏  |  浏览/下载：11/0  |  提交时间：2013/04/17
The influence of channel length on total ionizing dose effect in deep submicron technologies 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 5, 页码: 50702
Hu, ZY; Liu, ZL; Shao, H; Zhang, ZX（重点实验室）; Ning, BX; Bi, DW（重点实验室）; Chen, M; Zou, SC（重点实验室）
收藏  |  浏览/下载：50/0  |  提交时间：2013/05/10
The influence of channel length on total ionizing dose effect in deep submicron technologies 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 5, 页码: 50702
Hu, ZY; Liu, ZL; Shao, H; Zhang, ZX; Ning, BX; Bi, DW; Chen, M; Zou, SC
收藏  |  浏览/下载：19/0  |  提交时间：2013/04/17
Stationary phase approximation approach to the quasiparticle interference on the surface of a strong topological insulator 期刊论文
PHYSICAL REVIEW B, 2012, 卷号: 85, 期号: 12, 页码: 125314
Liu, Q; Qi, XL; Zhang, SC
收藏  |  浏览/下载：11/0  |  提交时间：2013/05/10
Impact of within-wafer process variability on radiation response 期刊论文
MICROELECTRONICS JOURNAL, 2011, 卷号: 42, 期号: 6, 页码: 883-888
Hu,ZY; Liu,ZL; Shao,H; Zhang,ZX; Ning,BX; Chen,M; Bi,DW; Zou,SC
收藏  |  浏览/下载：10/0  |  提交时间：2012/04/10
Radiation induced inter-device leakage degradation 期刊论文
CHINESE PHYSICS C, 2011, 卷号: 35, 期号: 8, 页码: 769-773
Hu,ZY; Liu,ZL; Shao,H; Zhang,ZX; Ning,BX; Chen,M; Bi,DW; Zou,SC
收藏  |  浏览/下载：12/0  |  提交时间：2012/04/10
Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 7, 页码: 70701
Liu,ZL; Hu,ZY; Zhang,ZX; Shao,H; Ning,BX; Bi,DW; Chen,M; Zou,SC
收藏  |  浏览/下载：9/0  |  提交时间：2012/04/10
Total ionizing dose effect in an input/output device for flash memory 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 12, 页码: 120703
Liu,ZL; Hu,ZY; Zhang,ZX; Shao,H; Chen,M; Bi,DW; Ning,BX; Zou,SC
收藏  |  浏览/下载：13/0  |  提交时间：2012/04/10
Impact of substrate bias on radiation-induced edge effects in MOSFETs 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 12, 页码: 120702
Hu,ZY; Liu,ZL; Shao-Hua; Zhang,ZX; Ning,BX; Chen,M; Bi,DW; Zou,SC
收藏  |  浏览/下载：9/0  |  提交时间：2012/04/10

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