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| Thermal Analysis of AlGaN/GaN High-Electron-Mobility HEMT with Graphene 期刊论文 Journal of nanoscience and nanotechnology, 2018 作者: Liu HG(刘洪刚); Jie Sun; Zhang GB(张国斌); Zhao M(赵妙); Chunli Yan 收藏  |  浏览/下载:34/0  |  提交时间:2019/04/19 |
| 一种锗纳米线结构的制作方法 专利 专利号: CN201310741573.5, 申请日期: 2015-04-01, 公开日期: 2014-04-02 作者: 孙兵; 常虎东; 赵威; 王盛凯; 刘洪刚 收藏  |  浏览/下载:2/0  |  提交时间:2016/06/20 |
| HIGH PERFORMANCE GE-PMOSFET INTEGRATED ON SI PLATFORM 期刊论文 Proceedings of ICSICT2014, 2014 作者: Sun B(孙兵); Gong ZJ(龚著婧); Yang X(杨旭); Wang SK(王盛凯); Zhao W(赵威) 收藏  |  浏览/下载:9/0  |  提交时间:2015/04/15 |
| A COMPARATIVE STUDY OF Ge MOSFET USING Al2O3/GeOX/Ge STACKS –FORMING HIGH QUALITY GeOX INTERFACE LAYER TO BOOST DEVICE PERFORMANCE 期刊论文 Proceedings of ICSICT2014, 2014 作者: Yang X(杨旭); Wang SK(王盛凯); Sun B(孙兵); Zhao W(赵威); Chang HD(常虎东) 收藏  |  浏览/下载:7/0  |  提交时间:2015/04/15 |
| SCHOTTKY BARRIER HEIGHT MODULATION IN METAL/N-GE SYSTEM 期刊论文 Proceedings of ICSICT2014, 2014 作者: Gong ZJ(龚著靖); Wang SK(王盛凯); Yang X(杨旭); Sun B(孙兵); Zhao W(赵威) 收藏  |  浏览/下载:9/0  |  提交时间:2015/04/16 |
| IMPACTS OF ANNEALING PROCESSES ON THE ELECTRICAL PROPERTIES OF GASB METAL-OXIDE-SEMICONDUCTOR DEVICES 期刊论文 Proceedings of ICSICT2014, 2014 作者: Zhou JH(周佳辉); Liu HG(刘洪刚); Wang SK(王盛凯); Yang X(杨旭); Zhao W(赵威) 收藏  |  浏览/下载:9/0  |  提交时间:2015/04/16 |
| Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric 期刊论文 Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,, 2014 作者: Liu HG(刘洪刚); Chang HD(常虎东); Zhao W(赵威); Sun B(孙兵); Gong ZJ(龚著婧) 收藏  |  浏览/下载:9/0  |  提交时间:2015/04/15 |
| High-k/Ge interface passivation using cycling ozone oxidation 期刊论文 Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,, 2014 作者: Wang SK(王盛凯); Han L(韩乐); Sun B(孙兵); Chang HD(常虎东); Zhao W(赵威) 收藏  |  浏览/下载:4/0  |  提交时间:2015/04/16 |
| Fluorinated Al2O3 Gate Dielectric Engineering on GaSb MOS Devices 期刊论文 Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,, 2014 作者: Ceng ZH(曾振华); Sun B(孙兵); Liu HG(刘洪刚); Wang SK(王盛凯); Zhou JH(周佳辉) 收藏  |  浏览/下载:3/0  |  提交时间:2015/04/16 |
| THE EFFECT OF IN-SITU OZONE ANNEALING PER CYCLE ON Al2O3 GATE DIELECTRIC DEPOSITED BY ATOMIC LAYER DEPOSITION USING TMA AND H2O FOR InGaAs MOS CAPACITOR 期刊论文 Proceedings of ICSICT2014, 2014 作者: Wang SK(王盛凯); Chang HD(常虎东); Zhao W(赵威); Sun B(孙兵); Liu HG(刘洪刚) 收藏  |  浏览/下载:9/0  |  提交时间:2015/04/16 |