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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Spatiotemporal changes in vegetation coverage and its driving factors in the Three-River Headwaters Region during 2000-2011 期刊论文 journal of geographical sciences, 2014 Liu Xianfeng; Zhang Jinshui; Zhu Xiufang; Pan Yaozhong; Liu Yanxu; Zhang Donghai; Lin Zhihui 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/11 vegetation coverage  spatiotemporal change  future trend  influence factors  Three-River Headwaters Region  CHINA  GROWTH   Parameter Extraction of Nano-Scale MOSFET by a Forward Gated-Diode Method 期刊论文 journal of computational and theoretical nanoscience, 2012 Zhang, Chenfei; Shi, Min; Zhang, Zhenjuan; Sun, Lin; Wang, Qiang; Ma, Chenyue; Guo, Xinjie; Zhang, Xiufang; He, Jin; Chen, Qin; Ye, Yun; Ma, Yong; Wang, Ruonan; Wang, Hao 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/16 Forward Gated-Diode Method  Recombination-Generation Current  Parameter Extraction  MOSFETs  INTERFACE STATE GENERATION  THRESHOLD VOLTAGE  RELIABLE MODEL  TRAPS   A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection 期刊论文 microelectronics reliability, 2011 Ma, Chenyue; Zhang, Lining; Zhang, Chenfei; Zhang, Xiufang; He, Jin; Zhang, Xing 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 CHARGE-PUMPING MEASUREMENTS  THRESHOLD-VOLTAGE MODEL  MOS-TRANSISTORS  MOSFETS  GENERATION  MECHANISM  NMOSFETS  STRESS  DEVICE  TRAPS   Forward gated-diode method for parameter extraction of MOSFETs 期刊论文 journal of semiconductors, 2011 Zhang, Chenfei; Ma, Chenyue; Guo, Xinjie; Zhang, Xiufang; He, Jin; Wang, Guozeng; Yang, Zhang; Liu, Zhiwei 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/17 A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection 其他 2011-01-01 Ma, Chenyue; Zhang, Lining; Zhang, Chenfei; Zhang, Xiufang; He, Jin; Zhang, Xing 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 Characteristics sensitivity of FinFET to fin vertical nonuniformity 其他 2011-01-01 Xu, Jiaojiao; Ma, Chenyue; Zhang, Chenfei; Zhang, Xiufang; Wu, Wen; Cao, Yu; Wang, Wenping; Ye, Yun; Yang, Shengqi; Lin, Xinnan; He, Jin 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 An accurate method to extract and separate interface and gate oxide traps by the MOSFET subthreshold current 其他 2011-01-01 Zhang, Chenfei; Ma, Chenyue; Xu, Jiaojiao; Wang, Ruonan; Zhao, Xiaojin; Gu, Xin; Zhang, Xiufang; Wu, Wen; Wang, Wenping; Zhao, Wei; Ma, Yong; Wang, Ruonan; Zhang, Dongwei; Bian, Wei; Yang, Guozeng; Yan, Zhang; Liu, Zhiwei; Ma, Yong; He, Jin 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance 其他 2011-01-01 Zhang, Xiufang; Ma, Chenyue; Zhao, Wei; Zhang, Chenfei; Wang, Guozeng; Wu, Wen; Wang, Wenping; Cao, Yu; Yang, Shengqi; Yang, Zhang; Ma, Yong; Ye, Yun; Li, Yongliang; Wang, Ruonan; Wang, Ruonan; He, Jin 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/13 Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device 期刊论文 microelectronics reliability, 2010 Ma, Chenyue; Wang, Hao; Zhang, Chenfei; Zhang, Xiufang; He, Jin; Zhang, Xing 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/10 THRESHOLD-VOLTAGE MODEL  MOSFETS  DEGRADATION  PERFORMANCE  STRESS   Forward gated-diode method for extracting gate oxide thickness and body doping concentration 其他 2010-01-01 Zhang, Chenfei; Ma, Chenyue; He, Frank; Zhang, Xiufang; Liu, Zhiwei 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13