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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：期刊论文    专题：大连理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Size-controlled graphite nanoplatelets: thermal conductivity enhancers for epoxy resin 期刊论文 JOURNAL OF MATERIALS SCIENCE, 2019, 卷号: 54, 页码: 10041-10054 作者:  Xing, Zhonghao;  Sun, Wen;  Wang, Lida;  Yang, Zhengqing;  Wang, Suilin 收藏  |  浏览/下载：32/0  |  提交时间：2019/12/02 Crystal atomic structure  Epoxy resins  Fillers  Graphite, Conductive fillers  Economic competitiveness  Graphite nanoplatelets  Graphite nanoplatelets (GNPs)  High thermal conductivity  Nitric acid treatment  Preparation process  Quantitative study, Thermal conductivity   Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure 期刊论文 ELECTRONICS, 2019, 卷号: 8 作者:  Huang, Huolin;  Li, Feiyu;  Sun, Zhonghao;  Sun, Nan;  Zhang, Feng 收藏  |  浏览/下载：26/0  |  提交时间：2019/12/02 vertical field-effect transistor (VFET)  back current blocking layer (BCBL)  gallium nitride (GaN)  normally off power devices   Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme 期刊论文 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2019, 卷号: 108, 页码: 197-201 作者:  Huang, Huolin;  Sun, Zhonghao;  Zhang, Feng;  Li, Feiyu;  Cao, Yaqing 收藏  |  浏览/下载：19/0  |  提交时间：2019/12/02 Ohmic contacts  Modeling process  Semiconductor devices  Gallium nitride   Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices 期刊论文 MICROMACHINES, 2018, 卷号: 9 作者:  Huang, Huolin;  Li, Feiyu;  Sun, Zhonghao;  Cao, Yaqing 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/02 threshold voltage (V-th) stability  gallium nitride (GaN)  high electron mobility transistors (HEMTs)  analytical model  high-temperature operation   Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 卷号: 51 作者:  Huang, Huolin;  Sun, Zhonghao;  Cao, Yaqing;  Li, Feiyu;  Zhang, Feng 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02 gallium nitride (GaN)  semiconductor devices  surface donor-like traps  current collapse