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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文 16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010 Pan X (Pan Xu); Wei M (Wei Meng); Yang CB (Yang Cuibai); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang) 收藏  |  浏览/下载：15/0  |  提交时间：2011/07/26 Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文 3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010 Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：15/0  |  提交时间：2011/07/26 High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29 BUFFER LAYER  STRESS  PHOTODIODES  REDUCTION  DETECTORS  SAPPHIRE  EPITAXY  GROWTH