CORC

在结果中检索

CORC

浏览/检索结果: 共11条，第1-10条 帮助

限定条件                    
已选(0)清除 条数/页：   排序方式：
Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010
Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：12/0  |  提交时间：2011/07/26
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Hou QF;  Zhang ML
收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09
Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Tang, CG; Chen, YH; Liu, Y; Zhang, RQ; Liu, XL; Wang, ZG; Zhang, R; Zhang, Z
收藏  |  浏览/下载：38/0  |  提交时间：2010/03/09
A 5GHz low power WLAN transceiver SiGe RFIC for personal communication terminal applications 会议论文
topical meeting on silicon monolithic integrated circuits in rf systems, long beach, ca, jan 10-12, 2007
Yan, J (Yan, Jun); Xu, QM (Xu, Qiming); Zhang, XL (Zhang, Xuelian); Hu, XQ (Hu, Xueqing); Xu, H (Xu, Hua); Shi, Y (Shi, Yin); Dai, FF (Dai, Fa Foster)
收藏  |  浏览/下载：70/8  |  提交时间：2010/03/29
Research on the band-gap of InN grown on siticon substrates 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM
收藏  |  浏览/下载：100/15  |  提交时间：2010/03/29
Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:  Xu B;  Ye XL;  Jin P
收藏  |  浏览/下载：92/22  |  提交时间：2010/03/29
DOTS  
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
作者:  Jin P;  Li CM;  Xu B;  Ye XL
收藏  |  浏览/下载：14/2  |  提交时间：2010/10/29
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15
STRESS  GROWTH  
High-concentration hydrogen in unintentionally doped GaN 会议论文
2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997
Zhang JP; Wang XL; Sun DZ; Li XB; Kong MY
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15

©版权所有 ©2017 CSpace - Powered by CSpace