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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文    专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Design of compound Fresnel-R lenses for new high-efficient photovoltaic concentrator (EI CONFERENCE) 会议论文 Nonimaging Optics: Efficient Design for Illumination and Solar Concentration VII, August 1, 2010 - August 4, 2010, San Diego, CA, United states Jing L.; Liu H.; Lu Z.; Zhao H. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 A new design of compound Fresnel-R concentrator is presented which is composed of two lenses: a primary lens (Fresnel lens) that works by total internal reflection at outer facets but refraction at inner facets  and a secondary lens that works by refraction. In contrast to previous Fresnel lens concentrator  this design increases the acceptance angle  improves the irradiance uniformity on the solar cell  and reduces the aspect ratio significantly. Another outstanding advantage of this concentrator is the fact that it mainly works by performing total internal reflection  reducing chromatic dependence as well as Fresnel losses. An optical efficiency more than 80% can be achieved. Moreover  in order to reduce the influence of manufacture accuracy and to increase the optical efficiency further  the central part of the bottom of the secondary lens which directly adhered to the solar cell is designed as a cone-shaped prism to collect the sunlight that doesn't reach the solar cell. 2010 SPIE.   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Yang X. T.; Ma X. M.; Zhu H. C.; Gao W. T.; Jin H.; Qi X. W.; Gao B.; Dong X. R.; Fu G. Z.; Jing H.; Wang C.; Chang Y. C.; Du G. T.; Cao J. L. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.   Novel one-side-rubbing in-plane switching liquid crystal display 会议论文 2000 Jing H.; Shao X. B.; Zhu X. L.; Zheng C. W.; Huang X. M. 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/28 Stimulated emission from organic semiconductor 会议论文 1999 Wang L. J.; Liu X. Y.; Ning Y. Q.; Liu Y.; Wu S. L.; Wu D. J.; Zhao J. M.; Jin C. Q.; Wang L. X.; Jing X. B.; Wang F. S. 收藏  |  浏览/下载：5/0  |  提交时间：2013/03/28 New method of improved STN-LCD viewing angle 会议论文 1996 Ma Z. J.; Ma R. X.; Liang Y. F.; Ma K.; Zhu X. L.; Jing H.; Huang X. M. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/28 Polymer stabilized amorphous STNLCDs using one-side rubbing 会议论文 1996 Jing H.; Ma K.; Ma R. X.; Zhu X. L.; Ma Z. J.; Liang Y. F.; Huang X. M. 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/28