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浏览/检索结果: 共12条，第1-10条 帮助 限定条件 内容类型：会议论文    专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文 Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 A set of ZnO/MgZnO heterostructures with well widths  Lw  varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton  while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness  the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.   Raman spectra and phonon modes of MgxZn1-xO alloy films (EI CONFERENCE) 会议论文 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Wei Z. P.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Wu C. X.; Zhang J. Y.; Yao B.; Fan X. W. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/25 Hexagonal MgxZn1-xO alloy layers with 0 &le 0.3 have been grown by plasma-assisted molecular beam epitaxy on sapphire (006) and Si (111) substrates. Their crystal structures are characterized by x-ray diffraction spectroscopy. The nonresonant and resonant Raman spectra were measured using 488 nm line from Ar+ laser  and 325 nm line from He-Cd laser by backscattering geometry. Four Raman modes (E2 high  LO  TO  multiphonon processes) were observed in the nonresonant Raman spectra of hexagonal MgxZn1-xO with different Mg contents. The optical phonon frequencies were found to display one-mode behaviour for all the samples since no separate ZnO- and MgO-like modes were observed. The long-wavelength frequencies of ZnO-like optical phonons measured in the resonant Raman spectra can be expressed as linear functions of x. These behaviours can be explained within a modified random-element-isodisplacement model (MREI). 2006 WILEY-VCH Verlag GmbH Co. KGaA.   Raman spectra and phonon modes of MgxZn1-xO alloy films 会议论文 2006 Wei Z. P.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Wu C. X.; Zhang J. Y.; Yao B.; Fan X. W. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/28 Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.   Studies of impurity process in ZnCdSe/ZnSe multiple quantum wells 会议论文 1998 Yu G. Y.; Fan X. W.; Zhang J. Y.; Yang B. J.; Zheng Z. H.; Zhao X. W.; Shen D. Z.; Lu Y. M.; Guan Z. P. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/28 Sensitivity and stability of a substituted phthalocyaninato polysiloxane Langmuir-Blodgett films and its gas sensor 会议论文 1998 Jiang D. P.; Fan Y.; Zhang L. G.; Li Y. J.; Lu A. D.; Iap; Iap 收藏  |  浏览/下载：6/0  |  提交时间：2013/03/28 Stimulated and spontaneous emissions in Zn0.8Cd0.2Se-ZnSe strained layer superlattice with Fabry-Perot cavity 会议论文 1998 Zheng Z. H.; Guan Z. P.; Fan X. W. 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/28 Large area transmission grating spectrograph with high collecting efficiency and good spatial resolution 会议论文 1998 Wang Z. S.; Wang Z.; Chen B.; Fan P. Z.; Chen X. D. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/28 Stimulated emission under photopumping in ZnSe-based MQWs grown by AP-MOCVD 会议论文 1998 Fan X. W.; Guan Z. P.; Shen D. Z.; Zhang J. Y.; Zheng Z. H.; Yang B. J. 收藏  |  浏览/下载：5/0  |  提交时间：2013/03/28 Stimulated emission, laser oscillation and its transient time relation in Zn0.8Cd0.2Se-ZnSe strained layer superlattice 会议论文 1996 Zheng Z. H.; Guan Z. P.; Fan X. W. 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/28