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Photoluminescence from ZnS1-xTex alloys under hydrostatic pressure 期刊论文
physical review b, 2002, 卷号: 66, 期号: 8, 页码: art.no.085203
Fang ZL; Li GH; Liu NZ; Zhu ZM; Han HX; Ding K; Ge WK; Sou IK
收藏  |  浏览/下载:40/0  |  提交时间:2010/08/12
Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size 期刊论文
journal of physics-condensed matter, 2000, 卷号: 12, 期号: 13, 页码: 3173-3180
Chen Y; Zhang W; Li GH; Zhu ZM; Han HX; Wang ZP; Zhou W; Wang ZG
收藏  |  浏览/下载:51/0  |  提交时间:2010/08/12
Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate 期刊论文
applied physics letters, 2000, 卷号: 76, 期号: 22, 页码: 3188-3190
Chen Y; Li GH; Zhu ZM; Han HX; Wang ZP; Zhou W; Wang ZG
收藏  |  浏览/下载:57/0  |  提交时间:2010/08/12
Temperature-induced turnover of the well and barrier layers in ZnSe/Zn0.84Mn0.16Se superlattices 期刊论文
physical review b, 1999, 卷号: 60, 期号: 4, 页码: 2691-2696
Zhu ZM; Li GH; Zhang W; Han HX; Wang ZP; Wang J; Wang X
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
Pressure behavior of deep centers in ZnSxTe1-x alloys 期刊论文
physica status solidi b-basic research, 1999, 卷号: 211, 期号: 1, 页码: 163-169
Liu NZ; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Ge WK; Sou IK
收藏  |  浏览/下载:35/0  |  提交时间:2010/08/12
Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers 期刊论文
journal of applied physics, 1999, 卷号: 85, 期号: 3, 页码: 1775-1779
Zhu ZM; Li GH; Liu NZ; Wang SZ; Han HX; Wang ZP
收藏  |  浏览/下载:23/0  |  提交时间:2010/08/12
Pressure behavior of deep centers in ZnSxTe1-x alloys 会议论文
8th international conference on high pressure semiconductor physics (hpsp-viii), thessaloniki, greece, aug 09-13, 1998
Liu NZ; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Ge WK; Sou IK
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/15
Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals 期刊论文
journal of physics-condensed matter, 1998, 卷号: 10, 期号: 18, 页码: 4119-4129
Liu NZ; Li GH; Zhu ZM; Han HX; Wang ZP; Ge WK; Sou IK
收藏  |  浏览/下载:38/0  |  提交时间:2010/08/12
Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer 期刊论文
journal of vacuum science & technology b, 1997, 卷号: 15, 期号: 6, 页码: 2021-2025
作者:  Xu B
收藏  |  浏览/下载:41/0  |  提交时间:2010/08/12


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