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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101 作者:  Wei HY;  Jiao CM;  Song HP 收藏  |  浏览/下载：236/41  |  提交时间：2010/03/08 aluminium compounds  conduction bands  energy gap  high electron mobility transistors  III-V semiconductors  magnesium compounds  passivation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra   Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08 aluminium compounds  dislocation density  electron mobility  gallium compounds  III-V semiconductors  interface roughness  semiconductor heterojunctions  two-dimensional electron gas  wide band gap semiconductors   Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 7, 页码: art. no. 072110 作者:  Wei HY 收藏  |  浏览/下载：83/0  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY   Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 12, 页码: art. no. 122111 Zhang, RQ; Guo, Y; Song, HP; Liu, XL; Yang, SY; Wei, HY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：21/0  |  提交时间：2010/03/08 PHOTOEMISSION SPECTROSCOPY  GAP STATES  CONTINUUM  LINEUPS  INN   Characterization of ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metal organic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 20, 页码: art. no. 205416 Yang, AL; Wei, HY; Liu, XL; Song, HP; Fan, HB; Zhang, PF; Zheng, GL; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：58/0  |  提交时间：2010/03/08 LOW-TEMPERATURE GROWTH  OPTICAL-PROPERTIES  ZNO NANOWIRES  THIN-FILMS  NANORODS  MGXZN1-XO  ZINC   Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer 期刊论文 solid state communications, 2003, 卷号: 126, 期号: 7, 页码: 391-394 作者:  Jin P;  Ye XL;  Li CM;  Xu B 收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12 nanostructures  semiconductors  optical properties  EPITAXY   High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm 期刊论文 applied physics letters, 2001, 卷号: 79, 期号: 18, 页码: 2868-2870 作者:  Xu B 收藏  |  浏览/下载：216/69  |  提交时间：2010/08/12 TEMPERATURE-DEPENDENCE   Unusual temperature-dependent optical properties of self-organized InAs/GaAs quantum dots at high excitation power 期刊论文 chinese physics letters, 2001, 卷号: 18, 期号: 7, 页码: 982-985 作者:  Xu B 收藏  |  浏览/下载：99/12  |  提交时间：2010/08/12 ENERGY RELAXATION  EMISSION  LASERS   Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3) 期刊论文 journal of applied physics, 2000, 卷号: 88, 期号: 6, 页码: 3392-3395 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 1.3 MU-M  MOLECULAR-BEAM EPITAXY  ROOM-TEMPERATURE  PHOTOLUMINESCENCE LINEWIDTH  EMISSION  LASERS  ENERGY