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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice 期刊论文 Infrared Physics & Technology, 2017, 卷号: 86, 页码: 159–164 作者:  Zhi Jiang;  Xi Han;  Yao-Yao Sun;  Chun-Yan Guo;  Yue-Xi Lv 收藏  |  浏览/下载：41/0  |  提交时间：2018/06/15 Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor 期刊论文 NATURE COMMUNICATIONS, 2017, 卷号: 8, 期号: 1, 页码: 970 作者:  Xiao-Xi Li;  Zhi-Qiang Fan;  Pei-Zhi Liu;  Mao-Lin Chen;  Xin Liu 收藏  |  浏览/下载：30/0  |  提交时间：2018/06/15 High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文 Chin.Phys.B, 2013, 卷号: 23, 期号: 1, 页码: 017805 Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan 收藏  |  浏览/下载：15/0  |  提交时间：2014/03/26 Molecular beam epitaxy growth of high electron mobility InAs AlSb deep 期刊论文 journal of applied physics, 2013, 卷号: 114, 期号: 1, 页码: 013704 Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu 收藏  |  浏览/下载：25/0  |  提交时间：2014/03/26 Defect of Te-doped GaSb layers grown by molecular beam epitaxy 期刊论文 journal of infrared and millimeter waves, 2012, 卷号: 31, 期号: 4, 页码: 298-301 Chen Y (Chen Yan); Deng AH (Deng Ai-Hong); Tang B (Tang Bao); Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：12/0  |  提交时间：2013/04/02 Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 7, 页码: art. no. 077305 Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Guo J (Guo Jie); Tang B (Tang Bao); Ren ZW (Ren Zheng-Wei); He ZH (He Zhen-Hong); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：26/0  |  提交时间：2010/08/17 IR DETECTION MODULES  INAS