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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well 期刊论文 scientific reports, 2016, 卷号: 6, 页码: 31189 J. B. Li; X. G. Wu; G. W. Wang; Y. Q. Xu; Z. C. Niu; X. H. Zhang 收藏  |  浏览/下载：12/0  |  提交时间：2017/03/16 Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文 journal of applied physics, 2015, 卷号: 117, 期号: 1, 页码: 014304 P. Y. Zhou; X. F. Wu; K. Ding; X. M. Dou; G. W. Zha; H. Q. Ni; Z. C. Niu; H. J. Zhu; D. S. Jiang; C. L. Zhao; B. Q. Sun 收藏  |  浏览/下载：21/0  |  提交时间：2016/03/29 The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots 期刊论文 journal of optics, 2010, 卷号: 12, 期号: 5, 页码: art. no. 055203 Huang X (Huang X.); Zhang XH (Zhang X. H.); Zhu YG (Zhu Y. G.); Li T (Li T.); Han LF (Han L. F.); Shang XJ (Shang X. J.); Ni HQ (Ni H. Q.); Niu ZC (Niu Z. C.) 收藏  |  浏览/下载：77/6  |  提交时间：2010/08/17 InAs quantum dots  nonlinear refraction  reflection Z-scan  dc electric field effect  ELECTROOPTIC PROPERTIES  SATURABLE ABSORBER  OPTICAL-PROPERTIES  WELL STRUCTURES  SINGLE-BEAM  BAND-GAP  ELECTROABSORPTION  ABSORPTION  REFLECTION  DEPENDENCE   Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy 期刊论文 journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 979-983 Zhao, H (Zhao, H.); Xu, YQ (Xu, Y. Q.); Ni, HQ (Ni, H. Q.); Zhang, SY (Zhang, S. Y.); Han, Q (Han, Q.); Du, Y (Du, Y.); Yang, XH (Yang, X. H.); Wu, RH (Wu, R. H.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：55/0  |  提交时间：2010/03/29 photoluminescence   Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature 期刊论文 journal of luminescence, 2007, 卷号: 122 sp.iss.si, 期号: 0, 页码: 188-190 Sun, Z (Sun, Z.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.); Xu, ZY (Xu, Z. Y.) 收藏  |  浏览/下载：27/0  |  提交时间：2010/03/29 GaInNAs/GaAs   Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文 conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006 Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：182/36  |  提交时间：2010/03/29 GaInNAs/GaAs quantum wells  optical properties  nonradiative recombination effect  time-resolved photoluminescence  PL decay dynamics  PL thermal quenching  MOLECULAR-BEAM EPITAXY  GAASN ALLOYS  EXCITATION