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浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Highly Sensitive Low-Bandgap Perovskite Photodetectors with Response from Ultraviolet to the Near-Infrared Region 期刊论文 Adv. Funct. Mater., 2017, 卷号: 27, 页码: 1703953 作者:  Wenbin Wang;  Dewei Zhao;  Fujun Zhang;  Ludong Li;  Mingde Du 收藏  |  浏览/下载：35/0  |  提交时间：2018/06/15 Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Fang, ZD (Fang, Zhidan); Gong, M (Gong, Meng); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：113/32  |  提交时间：2010/03/29 quantum dots  photoluminescence  combination layer  1.3 MU-M  LASERS  INALAS   Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Gong, M (Gong, Meng); Fang, ZD (Fang, Zhidan); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：118/36  |  提交时间：2010/03/29 surface morphology evolution  InAs nanostructures  island-pit pairs  MOLECULAR-BEAM EPITAXY  QUANTUM DOTS  COOPERATIVE NUCLEATION  HETEROEPITAXY  TRANSITION  ISLANDS  GROWTH   Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：82/21  |  提交时间：2010/03/29 atomic hydrogen  molecular beam epitaxy  step arrays  MOLECULAR-BEAM EPITAXY  ATOMIC-HYDROGEN  VICINAL SURFACE  QUANTUM DOTS  GROWTH  TEMPERATURE  IRRADIATION  MECHANISM  MBE   Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 mu m 期刊论文 journal of crystal growth, 2005, 卷号: 274, 期号: 1-2, 页码: 78-84 Gong Z; Fang ZD; Miao ZH; Niu ZC; Feng SL 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/17 1.5 mu m light   1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer 期刊论文 journal of infrared and millimeter waves, 2005, 卷号: 24, 期号: 5, 页码: 324-327 Fang ZD; Gong Z; Miao ZH; Niu ZC; Shen GD 收藏  |  浏览/下载：148/11  |  提交时间：2010/03/17 InAs/GaAs quantum dots   Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs 期刊论文 applied physics letters, 2005, 卷号: 86, 期号: 1, 页码: art.no.013104 Gong Z; Niu ZC; Fang ZD; Miao ZH; Feng SL 收藏  |  浏览/下载：61/0  |  提交时间：2010/03/17 MOLECULAR-BEAM EPITAXY   The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates 期刊论文 journal of physics-condensed matter, 2004, 卷号: 16, 期号: 1, 页码: 29-35 Gong Z; Fang ZD; Xu XH; Miao ZH; Ni HQ; Niu ZC; Feng SL 收藏  |  浏览/下载：147/48  |  提交时间：2010/03/09 MOLECULAR-BEAM EPITAXY   Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 mu m emission self-assembled InAs/GaAs quantum dots 期刊论文 journal of physics d-applied physics, 2004, 卷号: 37, 期号: 7, 页码: 1012-1016 Fang, ZD; Gong, Z; Miao, ZH; Kong, LM; Xu, XH; Ni, HQ; Niu, ZC 收藏  |  浏览/下载：151/47  |  提交时间：2010/03/09 PHOTOLUMINESCENCE   Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers 期刊论文 solid state communications, 2004, 卷号: 132, 期号: 6, 页码: 421-424 Gong Z; Fang ZD; Xu XH; Miao ZH; Niu ZC; Feng SL 收藏  |  浏览/下载：154/33  |  提交时间：2010/03/09 quantum dot