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Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well 期刊论文
physical review letters, 2012, 卷号: 109, 期号: 18, 页码: 186803
Miao MS (Miao, M. S.); Yan Q (Yan, Q.); Van de Walle CG (Van de Walle, C. G.); Lou WK (Lou, W. K.); Li LL (Li, L. L.); Chang K (Chang, K.)
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