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科研机构
半导体研究所 [17]
内容类型
会议论文 [17]
发表日期
2006 [3]
2003 [1]
2002 [1]
2000 [1]
1999 [1]
1998 [4]
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半导体物理 [17]
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学科主题:半导体物理
内容类型:会议论文
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Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
收藏
  |  
浏览/下载:98/31
  |  
提交时间:2010/03/29
InAs quantum dot
photoluminescence
modulation-doped
field effect transistor
MU-M
CAPPING LAYER
High efficiency RFID UHF power converter
会议论文
ieee region 10 conference (tencon 2006), hong kong, peoples r china, nov 14-17, 2006
Zhou, SH (Zhou, Shenghua)
;
Yang, ZC (Yang, Zhichao)
;
Wu, NJ (Wu, Nanjian)
收藏
  |  
浏览/下载:101/24
  |  
提交时间:2010/03/29
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
收藏
  |  
浏览/下载:183/36
  |  
提交时间:2010/03/29
GaInNAs/GaAs quantum wells
optical properties
nonradiative recombination effect
time-resolved photoluminescence
PL decay dynamics
PL thermal quenching
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS
EXCITATION
Optical study of localized and delocalized states in GaAsN/GaAs
会议论文
symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003
作者:
Tan PH
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ALLOYS
GAAS1-XNX
PHOTOLUMINESCENCE
RELAXATION
Optical study of electronic states in GaAsN
会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Luo XD
;
Yang CL
;
Huang JS
;
Xu ZY
;
Liu J
;
Ge WK
;
Zhang Y
;
Mascarenhas A
;
Xin HP
;
Tu CW
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
TEMPERATURE PHOTOLUMINESCENCE
QUANTUM-WELL
ALLOYS
RELAXATION
GAAS1-XNX
Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates
会议论文
27th annual conference on the physics and chemistry of semiconductor interfaces (pcsi-27), salt lake city, utah, jan 16-20, 2000
Yang Z
;
Sou IK
;
Chen YH
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2010/11/15
REFLECTANCE DIFFERENCE SPECTROSCOPY
ZNSE/GAAS INTERFACE
STATES
GAAS
Si-based optoelectronic devices and their attractive applications
会议论文
1st czech-chinese workshop on advanced materials for optoelectronics (amfo 98), prague, czech republic, jun 15-17, 1998
Wang QM
;
Yang QQ
;
Zhu YQ
;
Si JJ
;
Liu YL
;
Lei HB
;
Cheng BW
;
Yu JZ
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
会议论文
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Ma XY
;
Cao Q
;
Wang ST
;
Guo L
;
Wang ZM
;
Wang LM
;
He GP
;
Yang YL
;
Zhang HQ
;
Zhou XN
;
Chen LH
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/10/29
InGaAsP
strained layer quantum well
laser diode
MOCVD
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
会议论文
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Yang GW
;
Xu ZT
;
Xu JY
;
Ma XY
;
Zhang JM
;
Chen LH
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/10/29
strained quantum well
semiconductor lasers
The study of single mode 650nm AlGaInP quantum well laser diodes for DVD
会议论文
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Ma XY
;
Cao Q
;
Wang ST
;
Guo L
;
Wang LM
;
Yang YL
;
Zhang HQ
;
Zhang XY
;
Chen LH
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/10/29
AlGaInP
quantum well
laser diode
MOCVD
DVD
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