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Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 24, 页码: 241111
Zhang, L; Wei, XC; Liu, NX; Lu, HX; Zeng, JP; Wang, JX; Zeng, YP; Li, JM
收藏  |  浏览/下载：25/0  |  提交时间：2012/02/06
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM
收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713
Luo WJ; Wang XL; Guo LC; Mao HL; Wang CM; Ran JX; Li JP; Li JM
收藏  |  浏览/下载：191/53  |  提交时间：2010/03/08
GaN  Si(111)  Crack  AlN  MOCVD  
Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 281-283
Liu Z (Liu Zhe); Wang XL (Wang Xiaoliang); Wang JX (Wang Junxi); Hu GX (Hu Guoxin); Guo LC (Guo Lunchun); Li JP (Li Jianping); Li JM (Li Jinmin); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/29
Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708
Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min)
收藏  |  浏览/下载：70/0  |  提交时间：2010/03/29
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文
microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Wang XY (Wang, Xiaoyan); Wang XL (Wang, Xiaoliang); Hu GX (Hu, Guoxin); Wang BZ (Wang, Baozhu); Ma ZY (Ma, Zhiyong); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Ran JX (Ran, Junxue); Li JP (Li, Jianping)
收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29
Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 235-238
Ran JX (Ran Junxue); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Li JP (Li Jianping); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：137/0  |  提交时间：2010/03/29
doping  
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803
Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo)
收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP
收藏  |  浏览/下载：223/40  |  提交时间：2010/03/29
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD 期刊论文
microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Ran JX; Wang XL; Hu GX; Wang JX; Li JP; Wang CM; Zeng YP; Li JM
收藏  |  浏览/下载：54/0  |  提交时间：2010/04/11

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