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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors 期刊论文 chin. phys. lett., 2015, 卷号: 32, 期号: 12, 页码: 127301 Yan Jun-Da; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Jiang Li-Juan; Yin Hai-Bo; Feng Chun; Wang Cui-Mei; Qu Shen-Qi; Gong Jia-Min; Zhang Bo; Li Bai-Quan; Wang Zhan-Guo; Hou Xun 收藏  |  浏览/下载：31/0  |  提交时间：2016/03/29 The Growth and Fabrication of InGaN_GaN Multi-Quantum Well Solar Cells on Si(111) Substrates 期刊论文 chinese physics letters, 2013, 卷号: 30, 期号: 6, 页码: 068402 LI Zhi-Dong, XIAO Hong-Ling, WANG Xiao-Liang, WANG Cui-Mei, DENG Qing-Wen, JING Liang, DING Jie-Qin, WANG Zhan-Guo, HOU Xun 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/17 Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104 Hou QF (Hou Qi-Feng); Wang XL (Wang Xiao-Liang); Xiao; HL (Xiao Hong-Ling); Wang CM (Wang Cui-Mei); Yang CB (Yang Cui-Bai); Li JM (Li Jin-Min) 收藏  |  浏览/下载：255/64  |  提交时间：2010/05/24 N-TYPE GAN  DEEP LEVELS  SELENIDE  DEFECTS   Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4099-4104 Zhou WZ (Zhou Wen-Zheng); Lin T (Lin Tie); Shang LY (Shang Li-Yan); Huang ZM (Huang Zhi-Ming); Cui LJ (Cui Li-Jie); Li DL (Li Dong-Lin); Gao HL (Gao Hong-Ling); Zeng YP (Zeng Yi-Pine); Guo SL (Guo Shao-Ling); Gui YS (Gui Yong-Sheng); Chu JH (Chu Jun-Hao) 收藏  |  浏览/下载：65/0  |  提交时间：2010/03/29 In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As