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CORC

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Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres 期刊论文
polymers for advanced technologies, 2011, 卷号: 22, 期号: 5, 页码: 532-537
Ni XW; Hu XJ; Zhou SY; Sun CH; Bai XX; Chen P
收藏  |  浏览/下载：59/2  |  提交时间：2011/07/05
The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S 会议论文
20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005
Li J; An JM; Wang HJ; Xia JL; Gao DS; Hu XW
收藏  |  浏览/下载：176/36  |  提交时间：2010/03/29
The fabrication of thick SiO2 layer by anodization 会议论文
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Ou HY; Yang QQ; Lei HB; Wang QM; Hu XW
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15
The fabrication of thick SiO2 layer by anodization 期刊论文
optical materials, 2000, 卷号: 14, 期号: 3, 页码: 271-275
Ou HY; Yang QQ; Lei HB; Wang QM; Hu XW
收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12
The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文
symposium on nitride semiconductors, at the 1997 mrs fall meeting, boston, ma, dec 01-05, 1997
Zheng LX; Liang JW; Yang H; Li JB; Wang YT; Xu DP; Li XF; Duan LH; Hu XW
收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29
Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition 期刊论文
thin solid films, 1998, 卷号: 326, 期号: 1-2, 页码: 251-255
Zheng LX; Yang H; Xu DP; Wang XJ; Li XF; Li JB; Wang YT; Duan LH; Hu XW
收藏  |  浏览/下载：49/0  |  提交时间：2010/08/12
Growth of GaAs on Si by using a thin Si film as buffer layer 期刊论文
chinese physics letters, 1996, 卷号: 13, 期号: 1, 页码: 42-45
Hao MS; Liang JW; Jing XJ; Wang YT; Deng LS; Xiao ZB; Zheng LX; Hu XW
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/17
ALGAAS GAAS TJS LASER-DIODES FABRICATED ON SI SUBSTRATES BY MOCVD 期刊论文
journal of luminescence, 1988, 卷号: 40-41, 期号: 0, 页码: 814-815
HU XW; SAKAI S; SOGA T; UMENO M
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15

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