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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文 microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781 Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX 收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08 GaN  HEMT  2DEG  mobility  polarization   MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793 Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29 2DEG   Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803 Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo) 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29 deep defect   Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18 Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 MOCVD  GaN  resistivity  TSC  N-TYPE GAN  DOPED GAN  SPECTROSCOPY  CARBON  FE   Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ 收藏  |  浏览/下载：115/18  |  提交时间：2010/03/29 THERMALLY STIMULATED CURRENT  GALLIUM NITRIDE  DEFECTS   Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM 收藏  |  浏览/下载：203/36  |  提交时间：2010/03/29 MOCVD   Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates 期刊论文 science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814 Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H 收藏  |  浏览/下载：326/7  |  提交时间：2010/04/11 HEMT  GaN  MOCVD  power device  FIELD-EFFECT TRANSISTORS  SURFACE PASSIVATION