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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Fast Homoepitaxial Growth of 4H-SiC Films on 4∘ off-Axis Substrates in a SiH4-C2H4-H2 Systemb InAs quantum well structures 期刊论文 Chinese Physics Letters, 2013, 卷号: 30, 期号: 12, 页码: 8101 LIU Bin, SUN Guo-Sheng, LIU Xing-Fang, ZHANG Feng, DONG Lin, ZHENG Liu, YAN Guo-Guo, LIU Sheng-Bei, ZHAO Wan-Shun, WANG Lei, ZENG Yi-Ping, LI Xi-Guang, WANG Zhan-Guo, YANG Fei 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/18 Raman Spectra Analysis of GaN : Er Films Prepared by Ion Implantation 期刊论文 spectroscopy and spectral analysis, 2013, 卷号: 33, 期号: 3, 页码: 699-703 Tao Dong-yan; Liu Chao; Yin Chun-hai; Zeng Yi-ping 收藏  |  浏览/下载：12/0  |  提交时间：2013/09/17 Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si(100) substrates 期刊论文 chinese physics b, 2013, 卷号: 22, 期号: 8, 页码: 086802 Liu Xing-Fang, Sun Guo-Sheng, Liu Bin, Yan Guo-Guo, Guan Min, Zhang Yang, Zhang Feng, Dong Lin, Zheng Liu, Liu Sheng-Bei, Tian Li-Xin, Wang Lei, Zhao Wan-Shun, Zeng Yi-Ping 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/18 Growth and optical properties of InGaN/GaN dual-wavelength light-emitting diodes 期刊论文 acta photonica sinica, 2013, 卷号: 42, 期号: 10, 页码: 1135-1139 Zhao, Ling-Hui; Zhang, Lian; Wang, Xiao-Dong; Lu, Hong-Xi; Wang, Jun-Xi; Zeng, Yi-Ping 收藏  |  浏览/下载：13/0  |  提交时间：2014/04/30 Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4955-4959 Gao, HL (Gao Hong-Ling); Li, DL (Li Dong-Lin); Zhou, WZ (Zhou Wen-Zheng); Shang, LY (Shang Li-Yan); Wang, BQ (Wang Bao-Qiang); Zhu, ZP (Zhu Zhan-Ping); Zeng, YP (Zeng Yi-Ping) 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/29 channel thickness   Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs 期刊论文 chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741 Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 two-dimensional electron gas  high electron mobility transistor  self-consistent calculation  InAlAs/InGaAs heterostructure  CHARGE CONTROL MODEL  ELECTRON-MOBILITY TRANSISTORS  PSEUDOMORPHIC INGAAS HEMT  FIELD-EFFECT TRANSISTOR  QUANTUM-WELL  ALGAAS/INGAAS PHEMTS  GATE RECESS  HIGH-SPEED  HETEROJUNCTION  CHANNEL   Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors 期刊论文 acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682 Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载：66/0  |  提交时间：2010/04/11 HEMT  heterojunction  two dimentional electron gas  self-consistent calculation  FIELD-EFFECT TRANSISTOR  TRANSPORT-PROPERTIES  QUANTUM-WELLS  HEMTS  FREQUENCY  DENSITY