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Polarization stable low threshold current single fundamental mode VCSELs 期刊论文
optical materials express, 2015, 卷号: 5, 期号: 9, 页码: 1998-2005
Yiyang Xie; Chen Xu; Qiang Kan; Meng Xun; Kun Xu; Hongda Chen
收藏  |  浏览/下载:22/0  |  提交时间:2016/03/23
Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou
收藏  |  浏览/下载:30/0  |  提交时间:2016/03/29
Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
收藏  |  浏览/下载:22/0  |  提交时间:2014/03/18
Growth and characterization of AlGaNAlNGaNAlGaN double heterojunction structures with AlGaN as buffer layers 期刊论文
journal of crystal growth, 2013, 卷号: 383, 页码: 25–29
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
收藏  |  浏览/下载:14/0  |  提交时间:2014/03/18
High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文
the european physical journal applied physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Lin, Defeng; Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Deng, Qingwen; Bi, Yang; Zhang, Jingwen; Hou, Xun
收藏  |  浏览/下载:25/0  |  提交时间:2014/03/18
Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer 期刊论文
journal of alloys and compounds, 2013, 卷号: 576, 页码: 48–53
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
收藏  |  浏览/下载:20/0  |  提交时间:2014/03/18
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Chen H (Chen, Hong); Bi Y (Bi, Yang); Deng QW (Deng, Qinwen); Zhang JW (Zhang, Jingwen); Hou X (Hou, Xun)
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/26
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun
收藏  |  浏览/下载:13/0  |  提交时间:2013/04/19


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