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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth 期刊论文 ieee photonics technology letters, 2013, 卷号: 25, 期号: 24, 页码: 2401-2404 Feng, Mei-Xin; Liu, Jian-Ping; Zhang, Shu-Ming; Jiang, De-Sheng; Li, Zeng-Cheng; Zhou, Kun; Li, De-Yao; Zhang, Li-Qun; Wang, Feng; Wang, Hui; Chen, Ping; Liu, Zong-Shun; Zhao, De-Gang; Sun, Qian; Yang, Hui 收藏  |  浏览/下载：15/0  |  提交时间：2014/04/09 Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804 Guo X (Guo Xi); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Qiu YX (Qiu Yong-Xin); Xu K (Xu Ke); Yang H (Yang Hui) 收藏  |  浏览/下载：63/0  |  提交时间：2010/08/17 in-plane grazing incidence x-ray diffraction  gallium nitride  mosaic structure  biaxial strain  CHEMICAL-VAPOR-DEPOSITION  LATTICE-CONSTANTS  ALN