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CORC

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High Beam Quality of In-Phase Coherent Coupling 2-D VCSEL Arrays Based on Proton-Implantation 期刊论文
ieee photonics technology letters, 2014, 卷号: 26, 期号: 4, 页码: 395-397
Mao, MM; Xu, C; Kan, Q; Xie, YY; Xun, M; Xu, K; Liu, JC; Ren, HQ; Chen, HD
收藏  |  浏览/下载：14/0  |  提交时间：2015/03/19
A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 7, 页码: 3044-3048
Ding WC; Liu Y; Zhang Y; Guo JC; Zuo YH; Cheng BW; Yu JZ; Wang QM
收藏  |  浏览/下载：118/2  |  提交时间：2010/03/08
Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文
6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007
作者:  Chen P
收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Liu, NX; Yan, JC; Liu, Z; Ma, P; Wang, JX; Li, JM
收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer 期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 3, 页码: art.no.031103
作者:  Chen P
收藏  |  浏览/下载：74/0  |  提交时间：2010/03/29
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui)
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11
Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 7, 页码: art.no.071908
作者:  Jiang DS;  Zhang JC;  Yang H;  Zhang JC;  Zhang JC
收藏  |  浏览/下载：64/14  |  提交时间：2010/03/17
Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate 期刊论文
journal of crystal growth, 2004, 卷号: 260, 期号: 3-4, 页码: 331-335
作者:  Zhao DG
收藏  |  浏览/下载：207/73  |  提交时间：2010/03/09
Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells 期刊论文
journal of applied crystallography, 2004, 卷号: 37, 期号: 0, 页码: 391-394
Zhang JC; Wang JF; Wang YT; Wu M; Liu JP; Zhu JJ; Yang H
收藏  |  浏览/下载：275/86  |  提交时间：2010/03/09

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