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Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
Feng G; Shen XM; Zhu JJ; Zhang BS; Yang H; Liang JW
收藏  |  浏览/下载:17/2  |  提交时间:2010/10/29
MOCVD growth of high quality crack-free GaN on Si(III) substrates 会议论文
6th chinese optoelectronics symposium, kowloon, peoples r china, sep 12-14, 2003
Zhang BS; Zhu JJ; Wang YT; Yang H
收藏  |  浏览/下载:17/3  |  提交时间:2010/10/29


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