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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron 会议论文 IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, PORTUGAL, 2016-08-01 作者:  Zhang, Deming;  Zeng, Lang;  Cao, Kaihua;  Wang, Mengxing;  Peng, Shouzhong 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 All Spin Artificial Neural Network (ASANN)  artificial synaptic device  compound spintronic device  magnetic tunnel junction (MTJ)  post-CMOS non-volatile memory (NVM) technologies  resistive RAM (RRAM)   All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron 期刊论文 IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS, 2016, 卷号: 10, 页码: 828-836 作者:  Zhang, Deming;  Zeng, Lang;  Cao, Kaihua;  Wang, Mengxing;  Peng, Shouzhong 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/30 All Spin Artificial Neural Network (ASANN)  artificial synaptic device  compound spintronic device  magnetic tunnel junction (MTJ)  post-CMOS non-volatile memory (NVM) technologies  resistive RAM (RRAM)   Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy 期刊论文 MATERIALS, 2016, 卷号: 9 作者:  Zhao, Weisheng;  Zhao, Xiaoxuan;  Zhang, Boyu;  Cao, Kaihua;  Wang, Lezhi 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 magnetic tunnel junction  interfacial perpendicular magnetic anisotropy  process variation  stochastic behavior  barrier breakdown  STT-MRAM