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浏览/检索结果: 共29条，第1-10条 帮助 限定条件 发表日期：2016    专题：北京航空航天大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Exploration and Practice on the course of "Analysis of Electronic Information Business Case" 会议论文 11th International Symposium on Antennas, Propagation and EM Theory (ISAPE), Guilin, PEOPLES R CHINA, 2016-10-18 作者:  Ha, Congying;  Zhang, Youguang 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/30 business case analysis  electronic information  curriculum  evaluation   Spin Wave Based Synapse and Neuron for Ultra Low Power Neuromorphic Computation System 会议论文 IEEE International Symposium on Circuits and Systems (ISCAS), Montreal, CANADA, 2016-05-22 作者:  Zeng, Lang;  Zhang, Deming;  Zhang, Youguang;  Gong, Fanghui;  Gao, Tianqi 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 Quantitative Evaluation of Reliability and Performance for STT-MRAM 会议论文 IEEE International Symposium on Circuits and Systems (ISCAS), Montreal, CANADA, 2016-05-22 作者:  Zhang, Liuyang;  Todri-Sanial, Aida;  Kang, Wang;  Zhang, Youguang;  Torres, Lionel 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 STT-MRAM  Reliability  Hard and soft errors  Quantitative analysis   Performance Evaluation and Optimization of Single Layer MoS2 Double Gate Transistors with metallic contacts 会议论文 7th IEEE International Nanoelectronics Conference, Chengdu, PEOPLES R CHINA, 2016-01-01 作者:  Zeng, Lang;  Gong, Fanghui;  Nan, Jiang;  Huang, Yangqi;  Zhang, He 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 Read disturbance issue and design techniques for nanoscale STT-MRAM 期刊论文 JOURNAL OF SYSTEMS ARCHITECTURE, 2016, 卷号: 71, 页码: 2-11 作者:  Ran, Yi;  Kang, Wang;  Zhang, Youguang;  Klein, Jacques-Olivier;  Zhao, Weisheng 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/30 Nonvolatile memory  Read disturbance  Reliability  STT-MRAM   Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions 期刊论文 APPLIED PHYSICS LETTERS, 2016, 卷号: 109 作者:  Zhou, Jiaqi;  Zhao, Weisheng;  Wang, Yin;  Peng, Shouzhong;  Qiao, Junfeng 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 Ultra-Low Power All Spin Logic Device Acceleration based on Voltage Controlled Magnetic Anisotropy 会议论文 Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01 作者:  Zhang, Zhizhong;  Zhang, Yue;  Yue, Lei;  Su, Li;  Shi, Yichuan 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 all spin logic  spin current  voltage controlled magnetic anisotropy  acceleration   Stochastic Spintronic Device based Synapses and Spiking Neurons for Neuromorphic Computation 会议论文 Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01 作者:  Zhang, Deming;  Zeng, Lang;  Zhang, Youguang;  Zhao, Weisheng;  Klein, Jacques Olivier 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 Spintronics devices  Magnetic Tunnel Junction (MTJ)  Neuromorphic Computation  Compound Scheme  Analog-like Weight Spectrum  Stochastic Spiking Neuron (SSN)   A spin Hall effect-based multi-level cell for MRAM 会议论文 Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01 作者:  Shi, Qian;  Wang, Zhaohao;  Gao, Yuqian;  Chang, Liang;  Kang, Wang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 Magnetoresistive random access memory  multi-level cell  spin Hall effect  Non-volatile   Evaluation of Spin-Hall-assisted STT-MRAM for Cache Replacement 会议论文 Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01 作者:  Chang, Liang;  Wang, Zhaohao;  Gao, Yuqian;  Kang, Wang;  Zhang, Youguang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 spin orbit torque (SOT)  spin transfer torque (STT)  magnetoresistive random access memory (MRAM)  cache replacement  NVSim  GEM5