QQ客服 官方微博 反馈留言

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2013    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique 期刊论文 ieee electron device letters, 2013 Xu, Zhe; Wang, Jinyan; Liu, Yang; Cai, Jinbao; Liu, Jingqian; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 AlGaN/GaN MOSFET  gate recess  normally off  self-terminating  ENHANCEMENT-MODE  HEMTS  OXIDATION  GAN   Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric 期刊论文 ieee electron device letters, 2013 Meng, Di; Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May; Wu, Wengang 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 AlGaN/GaN  cutoff frequency  metal oxide semiconductor high electron mobility transistor (MOSHEMT)  thermal oxidized TiO2  FIELD-EFFECT TRANSISTORS  AL2O3  LAYER  HEMTS   Characteristics of submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC substrate 其他 2013-01-01 Di, Meng; Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May; Wu, Wengang 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Analysis on the CTLM and LTLM applicability for GaN HEMTs structure alloyed ohmic contact resistance evaluation 其他 2013-01-01 Lin, Shuxun; Meng, Di; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 A novel oxidation-based wet etching method for AlGaN/GaN heterostructures 期刊论文 journal of semiconductors, 2013 Cai, Jinbao; Wang, Jinyan; Liu, Yang; Xu, Zhe; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13