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Temperature dependent defects evolution and hardening of tungsten induced by 200 keV He-ions 会议论文
作者:  Cui, M. H.;  Wang, Z. G.;  Pang, L. L.;  Shen, T. L.;  Yao, C. F.
收藏  |  浏览/下载：156/0  |  提交时间：2018/08/20
Temperature dependent defects evolution and hardening of tungsten induced by 200 keV He-ions 会议论文
作者:  Cui, M. H.;  Wang, Z. G.;  Pang, L. L.;  Shen, T. L.;  Yao, C. F.
收藏  |  浏览/下载：157/0  |  提交时间：2018/08/20
ELEVATED EXPRESSION OF ZNF703 CONTRIBUTES TO TAMOXIFEN RESISTANCE IN BREAST CANCER CELL LINES 会议论文
作者:  Zhang, X.;  Min, J.;  Huang, O.;  Xie, Z.;  Garfield, D. H.
收藏  |  浏览/下载：13/0  |  提交时间：2019/01/08
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：36/0  |  提交时间：2014/05/15
Solar blind ultraviolet photodetectors based on MgZnO thin films 会议论文
Advanced Optoelectronics for Energy and Environment, AOEE 2013, May 25, 2013 - May 26, 2013, Wuhan, China
Zhang Z. Z.; Wang L. K.; Han S.; Zheng J.; Xie X. H.; Shen D. Z.
收藏  |  浏览/下载：12/0  |  提交时间：2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
TRIAXIALITY IN NEUTRON-RICH ZR ISOTOPES AND PROJECTED SHELL MODEL DESCRIPTION 会议论文
作者:  Liu, Y. X.;  Sun, Y.;  Zhou, X. H.;  Zhang, Y. H.;  Yu, S. Y.
收藏  |  浏览/下载：14/0  |  提交时间：2018/08/20
TRIAXIALITY IN NEUTRON-RICH ZR ISOTOPES AND PROJECTED SHELL MODEL DESCRIPTION 会议论文
作者:  Liu, Y. X.;  Sun, Y.;  Zhou, X. H.;  Zhang, Y. H.;  Yu, S. Y.
收藏  |  浏览/下载：12/0  |  提交时间：2018/08/20
SPECTROSCOPY OF A similar to 190 Ir-Pt-Au NUCLEI NEAR STABILITY FROM COMPLETE AND INCOMPLETE FUSION REACTION 会议论文
作者:  Fang, Y. D.;  Zhang, Y. H.;  Zhou, X. H.;  Liu, M. L.;  Wang, J. G.
收藏  |  浏览/下载：17/0  |  提交时间：2018/08/20

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