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浏览/检索结果: 共2条，第1-2条 帮助 限定条件 发表日期：2011     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET 期刊论文 Journal of Semiconductors., 2011, 卷号: 32, 期号: 6 Liu, ZL; Hu, ZY; Zhang, ZX; Shao, Hua; Chen, M; Bi, Dawei; Ning, Bingxu; Zou, SC 收藏  |  浏览/下载：27/0  |  提交时间：2012/08/28 Influence of poly region extended into field oxide on total ionizing dose effect for deep submicron MOSFET 期刊论文 Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS.RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings, 2011, 期号: 0, 页码: 28-35 Liu, ZL; Hu, ZY; Zhang, ZX; Shao, H; Ning, Bingxu; Chen, M; Bi, Dawei; Zou, SC 收藏  |  浏览/下载：26/0  |  提交时间：2012/08/28