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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2011    学科主题：半导体材料    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05 Atom force microscopy  Nanostructures  Molecular-beam epitaxy  Nanomaterials  Semiconducting gallium arsenide  QUANTUM-DOTS  ANODIC ALUMINA  ARRAYS  PLACEMENT  INAS   Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows 期刊论文 applied physics a: materials science and processing, 2011, 页码: 1-5 Jia, C.H.; Chen, Y.H.; Zhang, B.; Liu, X.L.; Yang, S.Y.; Zhang, W.F.; Wang, Z.G. 收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Absorption  Absorption spectroscopy  Crystal atomic structure  Epitaxial growth  Metallorganic chemical vapor deposition  Optical properties  Organic chemicals  Strontium alloys  Strontium titanates  X ray diffraction  Zinc sulfide   Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 116802 Li LG (Li Li-Gong); Liu SM (Liu Shu-Man); Luo S (Luo Shuai); Yang T (Yang Tao); Wang LJ (Wang Li-Jun); Liu FQ (Liu Feng-Qi); Ye XL (Ye Xiao-Ling); Xu B (Xu Bo); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：9/0  |  提交时间：2012/02/21 Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501 作者:  Zhou GY;  Zhang HY;  Xu B;  Ye XL 收藏  |  浏览/下载：68/4  |  提交时间：2011/07/05 INAS ISLANDS  MU-M  ESCAPE  GAAS  GAAS(100)  SUBSTRATE   Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402 Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06 FUNDAMENTAL-BAND GAP  INDIUM NITRIDE  BUFFER LAYER  DEPENDENCE  SAPPHIRE  MOCVD   Theoretical study of polarization-doped GaN-based light-emitting diodes 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 101110 Zhang, L.; Ding, K.; Liu, N.X.; Wei, T.B.; Ji, X.L.; Ma, P.; Yan, J.C.; Wang, J.X.; Zeng, Y.P.; Li, J.M. 收藏  |  浏览/下载：22/0  |  提交时间：2012/06/14 Electron injection  Gallium alloys  Gallium nitride  Light  Light emission  Organic light emitting diodes(OLED)  Polarization   Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文 nanoscale research letters, 2011, 卷号: 6, 页码: article no.50 作者:  Wei HY;  Song HP;  Zhang B 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  CORE-LEVEL PHOTOEMISSION  SB-DOPED SNO2  INN  GROWTH  GAN  NAXWO3  ALLOYS  GREEN  STATE