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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2006    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 QUANTUM-WELL STRUCTURES  PHOTOLUMINESCENCE SPECTRA  HEMTS   Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏  |  浏览/下载：20/0  |  提交时间：2010/04/11 characterization  point defects  molecular beam epitaxy  semiconducting gallium compounds  semiconducting indium compounds  semiconducting ternary compounds  1.55 MU-M  QUANTUM-WELLS  TEMPERATURE  GAAS   Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 5, 页码: art.no.051903 Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Xu B (Xu B.); Wang ZG (Wang Z. G.); Yang Z (Yang Z.) 收藏  |  浏览/下载：63/0  |  提交时间：2010/04/11 EXCHANGE INTERACTION  HEAVY-HOLE  ELECTRON  SUPERLATTICES   MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198 Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11 metamorphic  long wavelength  quantum dots  molecular beam epitaxy  MOLECULAR-BEAM EPITAXY  CHEMICAL-VAPOR-DEPOSITION  1.3 MU-M  GAAS  EMISSION  RANGE  ISLANDS  ARRAYS  LASERS   Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 31-35 Zhao C (Zhao C.); Chen YH (Chen Y. H.); Zhao M (Zhao Man); Zhang CL (Zhang C. L.); Xu B (Xu B.); Yu LK (Yu L. K.); Sun J (Sun J.); Lei W (Lei W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 Monte Carlo simulation  molecular beam epitaxy  kinetic effects  quantum dot  LAYER   Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate 期刊论文 electronics letters, 2006, 卷号: 42, 期号: 13, 页码: 757-758 Yang XR (Yang X. R.); Xu B (Xu B.); Wang ZG (Wang Z. G.); Jin P (Jin P.); Liang P (Liang P.); Hu Y (Hu Y.); Sun H (Sun H.); Chen YH (Chen Y. H.); Liu FL (Liu F. L.) 收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11 DOTS   Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs 期刊论文 nanotechnology, 2006, 卷号: 17, 期号: 23, 页码: 5846-5850 Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Ren YY (Ren Y. Y.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：105/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  FIELD-EFFECT TRANSISTORS  QUANTUM-DOTS  SELF-ORGANIZATION  ISLANDS  NANOSTRUCTURES  SUPERLATTICES  GROWTH  SURFACE  GAAS(100)