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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2006    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Defect influence on luminescence efficiency of GaN-based LEDs 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 371-374 Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) 收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11 defects  GaN  luminescence efficiency  LED   Effect of oxidation on the optical and surface properties of AlGaN 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8706-8709 Wang XL (Wang X. L.); Zhao DG (Zhao D. G.); Chen J (Chen J.); Li XY (Li X. Y.); Gong HM (Gong H. M.); Yang H (Yang H.) 收藏  |  浏览/下载：19/0  |  提交时间：2010/04/11 oxidation  AlGaN  surface morphology  RAY PHOTOELECTRON-SPECTROSCOPY  HIGH-POWER  GAN  OXIDE   Defect influence on luminescence efficiency of GaN-based LEDs 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) 收藏  |  浏览/下载：471/18  |  提交时间：2010/03/29 defects   The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers 期刊论文 materials letters, 2006, 卷号: 60, 期号: 29-30, 页码: 3693-3696 Wang XL (Wang X. L.); Zhao DG (Zhao D. G.); Li XY (Li X. Y.); Gong HM (Gong H. M.); Yang H (Yang H.); Liang JW (Liang J. W.) 收藏  |  浏览/下载：106/0  |  提交时间：2010/04/11 AlGaN  LT AlN  TAXRD  dislocation   Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130 Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.) 收藏  |  浏览/下载：39/0  |  提交时间：2010/04/11 photoluminescence  quantum dots  indium arsenide  1.3 MU-M  CHEMICAL-VAPOR-DEPOSITION  PHASE-EPITAXY  GAAS  LUMINESCENCE  SUBSTRATE  ISLANDS  DENSITY  LASERS  LAYER   Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties 期刊论文 journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 477-484 作者:   收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 bimodal size distribution  metalorganic vapor phase epitaxy  self-assembled quantum dots  indium arsenide  PHASE-EPITAXY  ISLANDS  INGAAS  SIZE  LASER