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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2005    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) 期刊论文 journal of crystal growth, 2005, 卷号: 273, 期号: 3-4, 页码: 494-499 作者:  Xu B;  Ye XL;  Jin P 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/17 nanostructures   Growth and characterization of InN on sapphire substrate by RF-MBE 期刊论文 journal of crystal growth, 2005, 卷号: 276, 期号: 3-4, 页码: 401-406 Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM; Wang, ZG 收藏  |  浏览/下载：32/0  |  提交时间：2010/03/17 photoluminescence   The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer 期刊论文 pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1791-1794 Shi, GX; Xu, B; Jin, P; Ye, XL; Cui, CX; Zhang, CL; Wu, J; Wang, ZG 收藏  |  浏览/下载：25/0  |  提交时间：2010/03/17 quantum dots  strain buffer layer  InAs  photoluminescence  WELL  LASER  LAYER   One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 23, 页码: art.no.231903 Cong, GW; Wei, HY; Zhang, PF; Peng, WQ; Wu, JJ; Liu, XL; Jiao, CM; Hu, WG; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：115/24  |  提交时间：2010/03/17 NANOWIRES   Growth and properties of GaN on Si (111) substrates with AlGaN/AlN buffer layer by NH3-GSMBE 期刊论文 journal of physics d-applied physics, 2005, 卷号: 38, 期号: 12, 页码: 1888-1891 Zhang NH; Wang XL; Zeng YP; Xiao HL; Wang JX; Liu HX; Li JM 收藏  |  浏览/下载：64/25  |  提交时间：2010/03/17 TEMPERATURE ALN INTERLAYERS