CORC

浏览/检索结果: 共2条,第1-2条 帮助

限定条件        
已选(0)清除 条数/页:   排序方式:
Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N+ and O+ co-implantation 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 12, 页码: 1782-1784
Lin, Q; Zhu, M; Liu, XH; Xie, XY; Lin, CL
收藏  |  浏览/下载:10/0  |  提交时间:2012/03/24
OXYGEN  
Geometrical deviation and residual strain in novel silicon-on-aluminium-nitride bonded wafers 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 11, 页码: 1718-1720
Men, CL; Xu, Z; Wu, YJ; An, ZH; Xie, XY; Lin, CL
收藏  |  浏览/下载:16/0  |  提交时间:2012/03/24


©版权所有 ©2017 CSpace - Powered by CSpace