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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Butt-coupled movpe growth for high-performance electro-absorption modulator integrated with a dfb laser 期刊论文 Journal of crystal growth, 2007, 卷号: 308, 期号: 2, 页码: 297-301 作者:  Cheng, YuanBing;  Pan, JiaoQing;  Liang, Song;  Feng, Wen;  Liao, Zaiyi 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Coupling efficiency  Butt-joint scheme  Metal-organic vapor phase epitaxy  Selective area growth (sag)  Semiconducting indium phosphide  Laser diodes   Effects of v/iii ratio on ingaas and inp grown at low temperature by lp-mocvd 期刊论文 Journal of crystal growth, 2004, 卷号: 260, 期号: 1-2, 页码: 23-27 作者:  Jiang, L;  Lin, T;  Wei, X 收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12 Doping  X-ray diffraction  Low press  Metalorganic vapor phase epitaxy  Semiconducting iii-v materials  Semiconducting indium phosphide   Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ 收藏  |  浏览/下载：177/52  |  提交时间：2010/03/29 DEEP-LEVEL DEFECTS  FE-DOPED INP  GROWN INP  SPECTROSCOPY  RESONANCE  WAFER   Microdefects and electrical uniformity of inp annealed in phosphorus and iron phosphide ambiances 期刊论文 Journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 作者:  Dong, ZY;  Zhao, YW;  Zeng, YP;  Duan, ML;  Sun, WR 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 Annealing  Defects  Etching  Semiconducting indium phosphide   Influence of semi-insulating inp substrates on inalas epilayers grown by molecular beam epitaxy 期刊论文 Journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369 作者:  Dong, HW;  Zhao, YW;  Zeng, YP;  Jiao, JH;  Li, JM 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 Diffusion  Interfaces  Substrates  Molecular beam epitaxy  Phosphides  Semiconducting indium phosphide   Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369 Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 diffusion  interfaces  substrates  molecular beam epitaxy  phosphides  semiconducting indium phosphide  UNDOPED SEMIINSULATING INP  CHEMICAL-VAPOR-DEPOSITION  PHOSPHIDE VAPOR  FE  INTERFACE  PHOTOLUMINESCENCE  WAFER  UNIFORMITY  DIFFUSION  PRESSURE   Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载：351/16  |  提交时间：2010/08/12 annealing  defects  etching  semiconducting indium phosphide  FE-DOPED INP  SEMIINSULATING INP  INDIUM-PHOSPHIDE  DEFECTS  DIFFUSION  CRYSTALS  WAFERS   Positron-annihilation study of compensation defects in inp 期刊论文 Journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001 作者:  Shan, YY;  Deng, AH;  Ling, CC;  Fung, S;  Ling, CD 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 Positron-annihilation study of compensation defects in InP 期刊论文 journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001 Shan YY; Deng AH; Ling CC; Fung S; Ling CD; Zhao YW; Sun TN; Sun NF 收藏  |  浏览/下载：99/9  |  提交时间：2010/08/12 UNDOPED SEMIINSULATING INP  INDIUM-PHOSPHIDE  LIFETIME  VACANCY  MECHANISMS  ACCEPTOR  GROWTH  GAAS   Residual donors in undoped LEC InP 会议论文 11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000 Zhao YW; Sun NF; Sun TN; Lin LY; Wu XW; Guo WL; Wu X; Bi KY 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 INDIUM-PHOSPHIDE  CARBON  DEFECTS  GROWTH