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Dependence of current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes on quantum well widths 期刊论文
Chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647
作者:  Zhang Yang;  Zhang Yu;  Zeng Yi-Ping
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes 期刊论文
Chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474
作者:  Zhang Yang;  Han Chun-Lin;  Gao Jian-Feng;  Zhu Zhan-Ping;  Wang Bao-Qiang
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474
Zhang, Y; Han, CL; Gao, JF; Zhu, ZP; Wang, BQ; Zeng, YP
收藏  |  浏览/下载:55/6  |  提交时间:2010/03/08
Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647
作者:  Zhang Y;  Zhang Y
收藏  |  浏览/下载:268/32  |  提交时间:2010/03/08
Polarization effects simulation of algan/gan heterojunction by using a symbolistic delta-doping layer 期刊论文
Solid state communications, 2004, 卷号: 132, 期号: 10, 页码: 701-705
作者:  Li, N;  Zhao, DG;  Yang, H
收藏  |  浏览/下载:11/0  |  提交时间:2019/05/12
Polarization effects simulation of AlGaN/GaN heterojunction by using a symbolistic delta-doping layer 期刊论文
solid state communications, 2004, 卷号: 132, 期号: 10, 页码: 701-705
Li, N; Zhao, DG; Yang, H
收藏  |  浏览/下载:152/59  |  提交时间:2010/03/09


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