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| Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者: Xue CL
  收藏 | 浏览/下载：63/4 | 提交时间：2011/07/05
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| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者: Duan RF
收藏 | 浏览/下载：80/4 | 提交时间：2011/07/05
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| Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者: Shi K; Jiao CM; Song HP
收藏 | 浏览/下载：94/7 | 提交时间：2011/07/05
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| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者: Pan X
收藏 | 浏览/下载：20/0 | 提交时间：2011/09/14
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| Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.)
收藏 | 浏览/下载：12/0 | 提交时间：2010/11/14
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| Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏 | 浏览/下载：41/0 | 提交时间：2010/12/28
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| Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏 | 浏览/下载：73/2 | 提交时间：2010/05/24
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| Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903
Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC
收藏 | 浏览/下载：31/0 | 提交时间：2010/03/08
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| Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 064211
作者: Wang Y; Pan JQ
收藏 | 浏览/下载：112/0 | 提交时间：2010/03/08
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| The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者: Yang H; Jiang DS; Zhao DG; Zhang SM; Yang H
收藏 | 浏览/下载：88/41 | 提交时间：2010/03/08
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