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Abnormal temperature dependent photoluminescence of excited states of inas/gaas quantum dots: carrier exchange between excited states and ground states 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 11, 页码: 5
作者:  Zhou, X. L.;  Chen, Y. H.;  Ye, X. L.;  Xu, Bo;  Wang, Z. G.
收藏  |  浏览/下载:11/0  |  提交时间:2019/05/12
Frequency drift and instantaneous linewidth broadening of phase-section tuned sg-dbr laser 期刊论文
Optics communications, 2011, 卷号: 284, 期号: 5, 页码: 1312-1317
作者:  Ke, Jian Hong;  Zhu, Ning Hua;  Xie, Liang;  Zhao, Ling Juan;  Wang, Li Xian
收藏  |  浏览/下载:32/0  |  提交时间:2019/05/12
Frequency drift and instantaneous linewidth broadening of phase-section tuned SG-DBR laser 期刊论文
optics communications, 2011, 卷号: 284, 期号: 5, 页码: 1312-1317
作者:  Wang LX;  Ke JH
收藏  |  浏览/下载:60/2  |  提交时间:2011/07/05
Resonant subband landau level coupling in symmetric quantum well 期刊论文
Journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: 4
作者:  Tung, L. -C.;  Wu, X. -G.;  Pfeiffer, L. N.;  West, K. W.;  Wang, Y. -J.
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Resonant subband Landau level coupling in symmetric quantum well 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.); Wu XG (Wu X. -G.); Pfeiffer LN (Pfeiffer L. N.); West KW (West K. W.); Wang YJ (Wang Y. -J.)
收藏  |  浏览/下载:29/0  |  提交时间:2010/12/05
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载:82/12  |  提交时间:2010/03/29
Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots 期刊论文
Semiconductor Photonics and Technology, 2003, 卷号: 9, 期号: 1, 页码: 30-33
作者:  Niu Zhichuan
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/23
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite gan epilayers 期刊论文
Applied physics letters, 2002, 卷号: 81, 期号: 23, 页码: 4389-4391
作者:  Xu, SJ;  Zheng, LX;  Cheung, SH;  Xie, MH;  Tong, SY
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers 期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 23, 页码: 4389-4391
Xu SJ; Zheng LX; Cheung SH; Xie MH; Tong SY; Yang H
收藏  |  浏览/下载:30/0  |  提交时间:2010/08/12
A narrow photoluminescence linewidth of 19.2 mev at 1.35 mu m from in0.5ga0.5as/gaas quantum island structure grown by molecular beam epitaxy 期刊论文
Chinese physics letters, 2001, 卷号: 18, 期号: 4, 页码: 608-610
作者:  Wang, XD;  Niu, ZC;  Feng, SL;  Miao, ZH
收藏  |  浏览/下载:13/0  |  提交时间:2019/05/12


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