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Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm 期刊论文
applied physics letters, 2014, 卷号: 105, 期号: 14, 页码: 143101
Fu, MQ; Pan, D; Yang, YJ; Shi, TW; Zhang, ZY; Zhao, JH; Xu, HQ; Chen, Q
收藏  |  浏览/下载：22/0  |  提交时间：2015/03/20
Ordered inas nanodots formed on the patterned gaas substrate by molecular beam epitaxy 期刊论文
Materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
作者:  Jin, Lan;  Zhou, Huiying;  Qu, Shengchun;  Wang, Zhanguo
收藏  |  浏览/下载：99/0  |  提交时间：2019/05/12
Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation 期刊论文
Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Zhou, Huiying;  Qu, Shengchun;  Jin, Peng;  Xu, Bo;  Ye, Xiaoling
收藏  |  浏览/下载：39/0  |  提交时间：2019/05/12
2-5m InAs/GaSb superlattices infrared photodetector 期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang; Tang, Bao; Wang, Guowei; Ren, Zhengwei; Niu, Zhichuan
收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文
optoelectronics letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329
Zhu, Yan; Ni, Hai-qiao; Wang, Hai-li; He, Ji-fang; Li, Mi-feng; Shang, Xiang-jun; Niu, Zhi-chuan
收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14
Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots 期刊论文
physica e: low-dimensional systems and nanostructures, 2011, 卷号: 44, 期号: 3, 页码: 686-689
Li, Y.Q.; Wang, X.D.; Xu, X.N.; Liu, W.; Yang, F.H.; Zeng, Y.P.
收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05
Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 105002
Qiu, Yingping; Wang, Yang; Shao, Yongbo; Zhou, Daibing; Liang, Song; Zhao, Lingjuan; Wang, Wei
收藏  |  浏览/下载：11/0  |  提交时间：2012/06/14
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Zhang, Yu; Wang, Guowei; Tang, Bao; Xu, Yingqiang; Xu, Yun; Song, Guofeng
收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14
Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating 期刊论文
Applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: 3
作者:  Cao, Yu-Lian;  Yang, Tao;  Xu, Peng-Fei;  Ji, Hai-Ming;  Gu, Yong-Xian
收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12

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