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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Discrete-Time Audio \Delta\Sigma Modulator Using Dynamic Amplifier With Speed Enhancement and Flicker Noise Reduction Techniques 期刊论文 IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2020, 卷号: 55, 期号: 2, 页码: 333-343 作者:  Song Ma;   Liyuan Liu , Member, IEEE;  Tong Fang, Student Member, IEEE;   Jian Liu ;   Nanjian Wu , Member, IEEE 收藏  |  浏览/下载：23/0  |  提交时间：2021/12/20 Low-frequency noise properties of gan schottky barriers deposited on intermediate temperature buffer layers 期刊论文 Materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525 作者:  Leung, BH;  Fong, WK;  Surya, C;  Lu, LW;  Ge, WK 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Gan  Low-frequency noise  Deep levels  Deep level transient fourier spectroscopy   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 期刊论文 materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525 Leung, BH; Fong, WK; Surya, C; Lu, LW; Ge, WK 收藏  |  浏览/下载：343/96  |  提交时间：2010/03/09 GaN   Studies of high dc current induced degradation in iii-v nitride based heterojunctions 期刊论文 Ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425 作者:  Ho, WY;  Surya, C;  Tong, KY;  Lu, LW;  Ge, WK 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Current stressing  Dlts  Flicker noise  Heterojunctions  Iii-v nitride   Studies of high DC current induced degradation in III-V nitride based heterojunctions 期刊论文 ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425 Ho WY; Surya C; Tong KY; Lu LW; Ge WK 收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12 current stressing  DLTS  flicker noise  heterojunctions  III-V nitride  LOW-FREQUENCY FLUCTUATIONS  RESONANT-TUNNELING DIODES  FLICKER NOISE  GALLIUM NITRIDE  1/F NOISE  DEVICES  TRANSISTORS  QUALITY   Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions 期刊论文 mrs internet journal of nitride semiconductor research, 1999, 卷号: 4, 期号: 0, 页码: art.no.g6.4 Ho WY; Fong WK; Surya C; Tong KY; Lu LW; Ge WK 收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12 FLUCTUATIONS  QUALITY  DIODES   Characterization of hot-electron effects on flicker noise in iii-v nitride based heterojunctions 期刊论文 Mrs internet journal of nitride semiconductor research, 1999, 卷号: 4, 页码: 5 作者:  Ho, WY;  Fong, WK;  Surya, C;  Tong, KY;  Lu, LW 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12