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CORC

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Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer 期刊论文
journal of alloys and compounds, 2013, 卷号: 576, 页码: 48–53
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
收藏  |  浏览/下载：20/0  |  提交时间：2014/03/18
The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  Wang C
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
Journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  Liu, Shiyong;  Zeng, Xiangbo;  Peng, Wenbo;  Xiao, Haibo;  Yao, Wenjie
收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12
Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism 期刊论文
solid state communications, 2011, 卷号: 151, 期号: 6, 页码: 456-459
Wu H; Gan HD; Zheng HZ; Lu J; Zhu H; Ji Y; Li GR; Zhao JH
收藏  |  浏览/下载：64/5  |  提交时间：2011/07/05
A new method to measure the carrier concentration of p-GaN 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M; Zhao DG
收藏  |  浏览/下载：66/7  |  提交时间：2011/07/05
A novel temperature sensor based on a long period fiber grating with a unique double-cladding layer structure 期刊论文
2011, 卷号: 3, 页码: v3281-v3283
Zhao, Qiang; Qu, Yi; Wang, Yongjie; Li, Fang
收藏  |  浏览/下载：10/0  |  提交时间：2012/06/14
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 064211
作者:  Wang Y;  Pan JQ
收藏  |  浏览/下载：113/0  |  提交时间：2010/03/08
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08
Properties of alyga1-yn/alxga1-xn/aln/gan double-barrier high electron mobility transistor structure 期刊论文
Chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: 4
作者:  Guo Lun-Chun;  Wang Xiao-Liang;  Xiao Hong-Ling;  Ran Jun-Xue;  Wang Cui-Mei
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12

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