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CORC

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Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 10, 页码: 105010
作者:  Zhang, Yuheng;   Yang, Jing;   Zhao, Degang;   Liang, Feng;   Chen, Ping;   Liu, Zongshun
收藏  |  浏览/下载：14/0  |  提交时间：2022/03/28
Metalorganic chemical vapor deposition growth of inas/gasb type ii superlattices with controllable asxsb1-xinterfaces 期刊论文
Nanoscale research letters, 2012, 卷号: 7, 期号: 1
作者:  Li,Li-Gong;  Liu,Shu-Man;  Luo,Shuai;  Yang,Tao;  Wang,Li-Jun
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2012, 卷号: 359, 页码: 55-59
Li LG (Li, Li-Gong); Liu SM (Liu, Shu-Man); Luo S (Luo, Shuai); Yang T (Yang, Tao); Wang LJ (Wang, Li-Jun); Liu JQ (Liu, Jun-Qi); Liu FQ (Liu, Feng-Qi); Ye XL (Ye, Xiao-Ling); Xu B (Xu, Bo); Wang ZG (Wang, Zhan-Guo)
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/26
Formation of rippled surface morphology during si/si (100) epitaxy by ultrahigh vacuum chemical vapour deposition 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 12, 页码: 7
作者:  Hu Wei-Xuan;  Cheng Bu-Wen;  Xue Chun-Lai;  Su Shao-Jian;  Wang Qi-Ming
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Effect of interface bond type on the structure of inas/gasb superlattices grown by metalorganic chemical vapor deposition 期刊论文
Chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 4
作者:  Li Li-Gong;  Liu Shu-Man;  Luo Shuai;  Yang Tao;  Wang Li-Jun
收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12
Effect of high temperature algan buffer thickness on gan epilayer grown on si(111) substrates 期刊论文
Journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Growth simulations of self-assembled nanowires on stepped substrates 期刊论文
Ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965
作者:  Liang, Song;  Kong, Duanhua;  Zhu, Hongliang;  Wang, Wei
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Well-aligned zn-doped tilted inn nanorods grown on r-plane sapphire by mocvd 期刊论文
Nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: 7
作者:  Zhang, Biao;  Song, Huaping;  Xu, Xiaoqing;  Liu, Jianming;  Wang, Jun
收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12
Effect of aln buffer thickness on gan epilayer grown on si(1 1 1) 期刊论文
Materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, CuiMei
收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12
Gan  Mocvd  Si(111)  Aln  
Investigation of a gan nucleation layer on a patterned sapphire substrate 期刊论文
Chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: 4
作者:  Wu Meng;  Zeng Yi-Ping;  Wang Jun-Xi;  Hu Qiang
收藏  |  浏览/下载：11/0  |  提交时间：2019/05/12

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