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Properties investigation of gan films implanted by sm ions under different implantation and annealing conditions 期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 1, 页码: 429-432
作者:  Jiang, L. J.;  Wang, X. L.;  Xiao, H. L.;  Wang, Z. G.;  Yang, C. B.
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Characteristics of undoped and sb-doped zno thin films prepared in different atmospheres by pulsed laser deposition 期刊论文
Physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850
作者:  Zhu, B. L.;  Zhu, S. J.;  Zhao, X. Z.;  Su, F. H.;  Li, G. H.
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
The explanation of inn bandgap discrepancy based on experiments and first-principle calculations 期刊论文
Physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Liu, Chaoren;  Li, Jingbo
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文
physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850
Zhu BL; Zhu SJ; Zhao XZ; Su FH; Li GH; Wu XG; Wu J
收藏  |  浏览/下载：96/5  |  提交时间：2011/07/05
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Band crossing in isovalent semiconductor alloys with large size mismatch: first-principles calculations of the electronic structure of bi and n incorporated gaas 期刊论文
Physical review b, 2010, 卷号: 82, 期号: 19, 页码: 4
作者:  Deng, Hui-Xiong;  Li, Jingbo;  Li, Shu-Shen;  Peng, Haowei;  Xia, Jian-Bai
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Donor defect in P-diffused bulk ZnO single crystal 会议论文
29th international conference on physics of semiconductors, rio de janeiro, brazil, 2009
Zhao YW (Zhao Youwen); Zhang R (Zhang Rui); Zhang F (Zhang Fan); Dong ZY (Dong Zhiyuan); Yang J (Yang Jun)
收藏  |  浏览/下载：463/158  |  提交时间：2010/10/11
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：48/0  |  提交时间：2010/12/27
Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2009, 卷号: 487, 期号: 1-2, 页码: 400-403
作者:  Zhang SM;  Jiang DS;  Zhu JJ;  Guo X;  Wang YT
收藏  |  浏览/下载：167/33  |  提交时间：2010/03/08
Optical and Electrical Properties of GaN.Mg Grown by MOCVD 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 1, 页码: 29-32
作者:  Zhang Shuming
收藏  |  浏览/下载：138/36  |  提交时间：2010/11/23

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