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Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 15, 页码: 151607
作者:  Gaoqiang Deng;   Yuantao Zhang;   Ye Yu;   Long Yan;   Pengchong Li;   Xu Han;   Liang Chen;   Degang Zhao;   Guotong Du
收藏  |  浏览/下载:10/0  |  提交时间:2019/11/19
Metalorganic chemical vapor deposition growth of inas/gasb type ii superlattices with controllable asxsb1-xinterfaces 期刊论文
Nanoscale research letters, 2012, 卷号: 7, 期号: 1
作者:  Li,Li-Gong;  Liu,Shu-Man;  Luo,Shuai;  Yang,Tao;  Wang,Li-Jun
收藏  |  浏览/下载:21/0  |  提交时间:2019/05/12
Surface characterization of algan grown on si (111) substrates 期刊论文
Journal of crystal growth, 2011, 卷号: 331, 期号: 1, 页码: 29-32
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Feng, Chun
收藏  |  浏览/下载:22/0  |  提交时间:2019/05/12
Effect of growth temperature on the morphology and phonon properties of inas nanowires on si substrates 期刊论文
Nanoscale research letters, 2011, 卷号: 6, 页码: 7
作者:  Li, Tianfeng;  Chen, Yonghai;  Lei, Wen;  Zhou, Xiaolong;  Luo, Shuai
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Investigation of a gan nucleation layer on a patterned sapphire substrate 期刊论文
Chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: 4
作者:  Wu Meng;  Zeng Yi-Ping;  Wang Jun-Xi;  Hu Qiang
收藏  |  浏览/下载:12/0  |  提交时间:2019/05/12
The effect of different oriented sapphire substrates on the growth of polar and non-polar znmgo by mocvd 期刊论文
Journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Shi, K.;  Yang, A. L.;  Wang, J.;  Song, H. P.;  Xu, X. Q.
收藏  |  浏览/下载:17/0  |  提交时间:2019/05/12
Molecular beam epitaxy growth of gaas on an offcut ge substrate 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: 6
作者:  He Ji-Fang;  Niu Zhi-Chuan;  Chang Xiu-Ying;  Ni Hai-Qiao;  Zhu Yan
收藏  |  浏览/下载:17/0  |  提交时间:2019/05/12
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102
作者:  Li MF
收藏  |  浏览/下载:106/7  |  提交时间:2011/07/05
Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique 期刊论文
guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033
Zhou, Zhi-Wen; He, Jing-Kai; Li, Cheng; Yu, Jin-Zhong
收藏  |  浏览/下载:46/0  |  提交时间:2012/06/13
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载:58/3  |  提交时间:2011/07/05


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