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CORC

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The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure 期刊论文
European physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 5
作者:  Bi, Y.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Peng, E. C.
收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H
收藏  |  浏览/下载：65/6  |  提交时间：2011/07/05
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：58/2  |  提交时间：2011/07/05
Self-consistent analysis of alsb/inas high electron mobility transistor structures 期刊论文
Journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: 7
作者:  Li, Yanbo;  Zhang, Yang;  Zeng, Yiping
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Quantum mechanical study on tunnelling and ballistic transport of nanometer si mosfets 期刊论文
Chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: 4
作者:  Deng Hui-Xiong;  Jiang Xiang-Wei;  Tang Li-Ming
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057101
Deng HX (Deng Hui-Xiong); Jiang XW (Jiang Xiang-Wei); Tang LM (Tang Li-Ming)
收藏  |  浏览/下载：102/3  |  提交时间：2010/05/24
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo); Zhang Y (Zhang Yang); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载：213/46  |  提交时间：2010/10/11
Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 9, 页码: 3980-3984
Zhao JZ; Lin ZJ; Corrigan TD; Zhang Y; Lu YJ; Lu W; Wang ZG; Chen H
收藏  |  浏览/下载：95/25  |  提交时间：2010/03/08
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08

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