CORC

在结果中检索

CORC

浏览/检索结果: 共48条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文
ieee transactions on electron devices, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai); Cheng, Buwen; Yeo, Yee-Chia
收藏  |  浏览/下载：20/0  |  提交时间：2013/08/27
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H
收藏  |  浏览/下载：65/6  |  提交时间：2011/07/05
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: 7
作者:  Wang Wei;  Huang Bei-Ju;  Dong Zan;  Chen Hong-Da
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:  Jiang XW
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：58/2  |  提交时间：2011/07/05
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi Y;  Lin DF;  Peng EC
收藏  |  浏览/下载：19/0  |  提交时间：2011/09/14
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503
作者:  Dong Z;  Huang BJ
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- sio2/si p-channel metal-oxide-semiconductor stacks 期刊论文
Applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: 3
作者:  Zheng, X. H.;  Huang, A. P.;  Xiao, Z. S.;  Yang, Z. C.;  Wang, M.
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12

©版权所有 ©2017 CSpace - Powered by CSpace