CORC

浏览/检索结果: 共61条,第1-10条 帮助

限定条件                
已选(0)清除 条数/页:   排序方式:
Intercalation of few-layer graphite flakes with fecl3: raman determination of fermi level, layer by layer decoupling, and stability 期刊论文
Journal of the american chemical society, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
作者:  Zhao, Weijie;  Tan, Ping Heng;  Liu, Jian;  Ferrari, Andrea C.
收藏  |  浏览/下载:18/0  |  提交时间:2019/05/12
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability 期刊论文
journal of the american chemical society, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
作者:  Liu J;  Tan PH
收藏  |  浏览/下载:90/4  |  提交时间:2011/07/05
Donor-donor binding in in2o3: engineering shallow donor levels 期刊论文
Journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: 5
作者:  Tang, Li-Ming;  Wang, Ling-Ling;  Wang, Dan;  Liu, Jian-Zhe;  Chen, Ke-Qiu
收藏  |  浏览/下载:11/0  |  提交时间:2019/05/12
Donor-donor binding in In2O3: Engineering shallow donor levels 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083704
Tang LM (Tang Li-Ming); Wang LL (Wang Ling-Ling); Wang D (Wang Dan); Liu JZ (Liu Jian-Zhe); Chen KQ (Chen Ke-Qiu)
收藏  |  浏览/下载:67/0  |  提交时间:2010/05/24
Deep levels in high resistivity gan detected by thermally stimulated luminescence and first-principles calculations 期刊论文
Journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: 4
作者:  Gai, Yanqin;  Li, Jingbo;  Hou, Qifeng;  Wang, Xiaoliang;  Xiao, Hongling
收藏  |  浏览/下载:21/0  |  提交时间:2019/05/12
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:  Li JB;  Hou QF
收藏  |  浏览/下载:66/11  |  提交时间:2010/03/08
Band-gap bowing and p-type doping of (zn, mg, be)o wide-gap semiconductor alloys: a first-principles study 期刊论文
European physical journal b, 2008, 卷号: 66, 期号: 4, 页码: 439-444
作者:  Shi, H. -L.;  Duan, Y.
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12
First-principles study of transition metal impurities in si 期刊论文
Physical review b, 2008, 卷号: 77, 期号: 15, 页码: 8
作者:  Zhang, Z. Z.;  Partoens, B.;  Chang, Kai;  Peeters, F. M.
收藏  |  浏览/下载:27/0  |  提交时间:2019/05/12
Origin of the doping bottleneck in semiconductor quantum dots: a first-principles study 期刊论文
Physical review b, 2008, 卷号: 77, 期号: 11, 页码: 4
作者:  Li, Jingbo;  Wei, Su-Huai;  Li, Shu-Shen;  Xia, Jian-Bai
收藏  |  浏览/下载:15/0  |  提交时间:2019/05/12
Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study 期刊论文
physical review b, 2008, 卷号: 77, 期号: 11, 页码: art. no. 113304
Li, JB; Wei, SH; Li, SS; Xia, JB
收藏  |  浏览/下载:54/6  |  提交时间:2010/03/08


©版权所有 ©2017 CSpace - Powered by CSpace